Indium concentration on InGaN/GaN nanolayers quantum well

Language: English

Published by LAP LAMBERT Academic Publishing Okt 2018, 2018

6139911680 / 9786139911684

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This item is printed on demand - Print on Demand Titel. Neuware -We believe that positive ion plays an important role in Indium-containing nitride compounds. Increasing indium, even in low amounts in nitride compounds, has been shown to increase the intensity of the radiation spectrum in LEDs and LDs. This is related to an increase in the radiation spectrum with the effect of indium. There are various results that confirm the effect of fluctuations in the indium diffusion in nitride alloys.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 100 pp. Englisch.

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Bibliographic details

Title
Indium concentration on InGaN/GaN nanolayers quantum well
Author
Samane Sadat Ahmadi
Publisher
LAP LAMBERT Academic Publishing Okt 2018
Publication year
2018
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
6139911680
ISBN 13
9786139911684
Item weight
167 grams
Dimensions
220x150x6 mm

buchversandmimpf2000

Emtmannsberg, BAYE, Germany

5-star seller

AbeBooks seller since January 23, 2017

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Impressum Thorsten Retsch Buchversand Mimpf2000 Oberölschnitz 16 95517 Emtmannsberg Deutschland Telefon: 09209-2023188 Email: mimpf2000@online.de USt-ID-Nr.: DE 235096871 Wir führen gebrauchte Bücher aus allen Sparten der Literatur

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