Hot-Carrier Effects in MOS Devices
Language: English
Published by Elsevier Science Publishing Co Inc, US, 1995
- Hardcover
- New
Seller: Rarewaves.com UK, London, United KingdomRarewaves.com UK
AbeBooks seller since June 11, 2025
Condition: New
£ 60.53
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Add to basketItem description from seller
The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.
Seller Inventory # LU-9780126822403
- Title
- Hot-Carrier Effects in MOS Devices
- Author
- Eiji Takeda, Cary Y. Yang, Akemi Miura-Hamada
- Publisher
- Elsevier Science Publishing Co Inc, US
- Publication year
- 1995
- Condition
- New
- Binding
- Hardback
- Language
- English
- ISBN 10
- 0126822409
- ISBN 13
- 9780126822403
- Item weight
- 580 grams
The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world.
This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.
- Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book
- The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field
- The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions
- Provides the most complete review of device degradation mechanisms as well as drain engineering methods
- Contains the most extensive reference list on the subject
"Synopsis" may belong to another edition of this title.
From the Back Cover
This book is derived from Dr. Takeda's book in Japanese, Hot-Carrier Effects (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takeda's original work was merely a starting point for developing this much more complete and fundamental text on increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices and the practical considerations related to hot carriers.
Hot-Carrier Effects in MOS Devices provides background information, clarifies important concepts, and presents the most recent findings in a readable form. Moreover, this book is not only indispensable for researches and graduate students, but also a highly useful reference for MOS device and process engineers.
"About the title" may belong to another edition of this title.
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London, United Kingdom
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