High Mobility Materials for CMOS Applications
Language: English
Published by Elsevier Inc Jun 2018, 2018
Series: Book 113 of 203 - Woodhead Publishing Series in Electronic and Optical Materials
- Softcover
- New
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.
AbeBooks seller since January 11, 2012
Condition: New
£ 166.00
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Add to basketItem description from seller
This item is printed on demand - it takes 3-4 days longer - Neuware -High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. 388 pp. Englisch.
Seller Inventory # 9780081020616
- Title
- High Mobility Materials for CMOS Applications
- Author
- Nadine Collaert
- Publisher
- Elsevier Inc Jun 2018
- Publication year
- 2018
- Condition
- Neu
- Binding
- Taschenbuch
- Language
- English
- ISBN 10
- 0081020619
- ISBN 13
- 9780081020616
- Item weight
- 519 grams
- Dimensions
- 229x152x20 mm
- Series
- Book 113 of 203: Woodhead Publishing Series in Electronic and Optical Materials
High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology.
"Synopsis" may belong to another edition of this title.
About the Author
From 2012 until April 2016 she was program manager of the imec LOGIC program, focusing on high mobility channels, TFET and nanowires.
Since April 2016 she is a distinguished member of technical staff responsible for the research on novel CMOS scaling approaches based on heterogeneous integration of new materials with Si and new material-enabled device and system approaches to increase functionality.
She has authored or coauthored more than 300 papers in international journals and conference proceedings. She has been a member of the CDT committee of the IEDM conference and she is still a member of the Program Committees of the international conferences ESSDERC and ULIS/EUROSOI. Nadine Collaert has been involved in the theory, design, and technology of FinFET-based multi-gate devices, emerging memory devices, transducers for biomedical applications and the integration and characterization of biocompatible materials e.g. carbon-based materials.
"About the title" may belong to another edition of this title.
BuchWeltWeit Ludwig Meier e.K.
Bergisch Gladbach, Germany
AbeBooks seller since January 11, 2012
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