Heteroepitaxial Growth of GaN: Role of Surface Modifications

Language: English

Published by LAP LAMBERT Academic Publishing, 2013

3659436496 / 9783659436499

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nach der Bestellung gedruckt Neuware - Printed after ordering - This work has been motivated by the outstanding need to prepare suitable substrate for growth of III-nitride heteroepitaxial thin films. The issue of lattice and thermal expansion mismatches between the substrates and overlayers, which results in a high threading dislocation density in the films, is seen to be detrimental to photon and carrier transport in these systems. Thus, looking for appropriate substrates or modifying substrates appropriately, has attracted enormous attentions. The work includes the chemical and structural modifications of silicon, gallium arsenide and sapphire substrates, to obtain appropriate characteristics. The work also consists of a significant portion on the adsorption and desorption characteristic of Ga metal on various high and low index silicon surfaces. This study not only complements the search for substrate for GaN growth, but also in other interesting aspects of initial stages of metal/semiconductor interface formation, evolution of superstructural 2D- surface phases and formation of sub-nanodimension metal nanostructures and delta doped.

Seller Inventory # 9783659436499

Title
Heteroepitaxial Growth of GaN: Role of Surface Modifications
Author
S. M. Shivaprasad
Publisher
LAP LAMBERT Academic Publishing
Publication year
2013
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
3659436496
ISBN 13
9783659436499
Item weight
328 grams
Dimensions
220x150x14 mm

AHA-BUCH GmbH

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