Gate Stack Engineering for Emerging Polarization based Non-volatile Memories

Language: English

Published by Books on Demand, 2017

3744867889 / 9783744867887

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Seller: moluna, Greven, Germanymoluna

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Softcover

Condition: New

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Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as the main requirements for future memories. These remarkable properties of ferroelectric memories .

Seller Inventory # 158161100

Title
Gate Stack Engineering for Emerging Polarization based Non-volatile Memories
Author
Pesic, Milan
Publisher
Books on Demand
Publication year
2017
Condition
New
Binding
Soft cover
Language
English
ISBN 10
3744867889
ISBN 13
9783744867887
Dimensions
1 x 21 x 14.8
Seller catalogs
Mathematik/Naturwissenschaften/Technik/Medizin

moluna

Greven, Germany

5-star seller

AbeBooks seller since July 9, 2020

Shipping rates from Germany to U.S.A.

Item16 to 45 business days16 to 45 business days
First item£ 41.24£ 41.24
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Moluna GmbH

Engberdingdamm 27
Greven, Germany 48268