Ferroelectric Random Access Memories. Fundamentals and Applications.. This item is unavailable.
Language: English
Published by Berlin/ Heidelberg, Springer Berlin., 2004
- Hardcover
- Used
Seller: Universitätsbuchhandlung Herta Hold GmbH, Berlin, GermanyUniversitätsbuchhandlung Herta Hold GmbH
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Item description from seller
2004. 16 x 24 cm. XIII, 291 S. XIII, 291 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. (Topics in Applied Physics). Sprache: Englisch.
Seller Inventory # 250ZB
- Title
- Ferroelectric Random Access Memories. Fundamentals and Applications.
- Author
- Ishiwara, Hiroshi/Okuyama, Masanori/Arimoto, Yoshihiro (Hrsg.)
- Publisher
- Berlin/ Heidelberg, Springer Berlin.
- Publication year
- 2004
- Binding
- Hardcover
- Language
- English
- ISBN 10
- 3540407189
- ISBN 13
- 9783540407188
- Series
- Book 8 of 37: Topics in Applied Physics
- Seller catalogs
- Varia
In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introductory book on FeRAM for graduate students and newcomers to this field; it also helps specialists to understand FeRAMs more deeply.
"Synopsis" may belong to another edition of this title.
From the Back Cover
In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply.
"About the title" may belong to another edition of this title.