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Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures

Marco Fanciulli

Published by Springer-Verlag Gmbh Sep 2009, 2009
ISBN 10: 354079364X / ISBN 13: 9783540793649
/ New / Condition: Neu / Soft cover
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Title: Electron Spin Resonance and Related ...

Publisher: Springer-Verlag Gmbh Sep 2009

Publication Date: 2009

Binding: Taschenbuch

Book Condition: Neu

Description:

Neuware - The spin degree-of-freedom is o ering a wide range of intriguing oppor- nities both in fundamental as well as in applied solid-state physics. When combined with the rich and fertile physics of low-dimensional semicondu- ingstructuresandwiththepossibilitytochange,forexample,carrierdensity, electric elds or coupling to other quantum systems in a controlled way, an extremely exciting and interesting research eld is opened. Most comm- cial electronic devices are based on spin-independent charge transport. In the last two decades, however, scientists have been focusing on the ambitious objective of exploiting the spin degree-of-freedom of the electron to achieve novel functionalities. Ferromagnetic semiconductors, spin transistors, sing- spin manipulations or spin-torque MRAMs (magnetoresistive random access memories) are some of the hot topics. The importance of spin phenomena for new applications was recognized by the Royal Swedish Academy of S- ences by awarding the 2007 Nobel Prize in Physics jointly to Albert Fert and Peter Grun berg for the discovery of giant magnetoresistance . This - fect originates from spin-dependent scattering phenomena in a two-terminal ferromagnetic paramagnetic ferromagnetic junction leading to a new type of magnetic memory. The Hall e ect and its applications remain fertile - search areas. The spin Hall e ect, in analogy with the conventional Hall e ect, occurs in paramagnetic systems as a result of spin-orbit interaction. 261 pp. Englisch. Bookseller Inventory # 9783540793649

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Reseña del editor: The spin degree-of-freedom is o?ering a wide range of intriguing oppor- nities both in fundamental as well as in applied solid-state physics. When combined with the rich and fertile physics of low-dimensional semicondu- ingstructuresandwiththepossibilitytochange,forexample,carrierdensity, electric ?elds or coupling to other quantum systems in a controlled way, an extremely exciting and interesting research ?eld is opened. Most comm- cial electronic devices are based on spin-independent charge transport. In the last two decades, however, scientists have been focusing on the ambitious objective of exploiting the spin degree-of-freedom of the electron to achieve novel functionalities. Ferromagnetic semiconductors, spin transistors, sing- spin manipulations or spin-torque MRAMs (magnetoresistive random access memories) are some of the hot topics. The importance of spin phenomena for new applications was recognized by the Royal Swedish Academy of S- ences by awarding the 2007 Nobel Prize in Physics jointly to Albert Fert and Peter Grun ¨ berg "for the discovery of giant magnetoresistance". This - fect originates from spin-dependent scattering phenomena in a two-terminal ferromagnetic-paramagnetic-ferromagnetic junction leading to a new type of magnetic memory. The Hall e?ect and its applications remain fertile - search areas. The spin Hall e?ect, in analogy with the conventional Hall e?ect, occurs in paramagnetic systems as a result of spin-orbit interaction.

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