Effect of Underlap On Device Performance of GaN Based DG-MOSFET

Language: English

Published by LAP LAMBERT Academic Publishing Jul 2016, 2016

3659920134 / 9783659920134

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This item is printed on demand - Print on Demand Titel. Neuware -GaN based double gate (DG) metal oxide semiconductor field effect transistors (MOSFETs) with a gate length of 10 nm have been designed for the next generation logic applications. The sub-threshold slope (SS) and drain induced barrier lowering (DIBL) are 66.5 mV/decade and 30 mV/V, respectively. The length of gate underlap is varied from 1 to 4 nm. The underlap architectures exhibit better performance due to reduced capacitive coupling between the contacts (S-G and G-D) which minimize the short channel effects. To improve the figure of merits of the proposed device, source to gate (S-G) and gate to drain (G-D) distances are varied which is mentioned as underlap. The lengths are maintained equal for both sides of the gate.The length of gate underlap is varied from 1 to 4 nm. The underlap architectures exhibit better performance due to reduced capacitive coupling between the contacts (S-G and G-D) which minimize the short channel effects. Therefore, the proposed GaN based DG MOSFETs shows excellent promise as one of the candidates to substitute currently used MOSFETs for future high speed applications.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 68 pp. Englisch.…

Seller Inventory # 9783659920134

Title
Effect of Underlap On Device Performance of GaN Based DG-MOSFET
Author
Md. Rokib Hasan
Publisher
LAP LAMBERT Academic Publishing Jul 2016
Publication year
2016
Condition
Neu
Dust jacket
Dust Jacket Included
Binding
Taschenbuch
Language
English
ISBN 10
3659920134
ISBN 13
9783659920134
Item weight
119 grams
Dimensions
220x150x5 mm

buchversandmimpf2000

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