Defects in Microelectronic Materials and Devices

Daniel M. Fleetwood, Sokrates T. Pantelides, Ronald D. Schrimpf

ISBN 10: 0367386399 / ISBN 13: 9780367386399

Published by CRC Press, 2019

: Este libro ofrece una visión exhaustiva de los avances recientes en la comprensión de los defectos eléctricamente activos en materiales microelectrónicos, centrándose principalmente en la microelectrónica basada en silicio. La obra pone especial énfasis en aquellos defectos que limitan la calidad, fiabilidad, capacidad de fabricación y respuesta a la radiación de los dispositivos.A través de las perspectivas de destacados teóricos e investigadores, se analizan los defectos en aislantes y semiconductores, así como los mecanismos de fallo relacionados con el hidrógeno. Además, el texto explora materiales semiconductores compuestos para aplicaciones microelectrónicas y examina nueva información obtenida a partir de modelos físicos y de ingeniería, siendo una referencia esencial para ingenieros y científicos del sector. EAN: 9780367386399 Tipo: Libros Categoría: Tecnología|Ciencias Título: Defects in Microelectronic Materials and Devices Autor: Daniel M. Fleetwood| Sokrates T. Pantelides| Ronald D. Schrimpf Editorial: CRC Press Idioma: en Páginas: 770 Formato: tapa blanda. Seller Inventory # Happ-2026-03-27-f4618b47

Synopsis:

Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.

A comprehensive survey of defects that occur in silicon-based metal-oxide semiconductor field-effect transistor (MOSFET) technologies, this book also discusses flaws in linear bipolar technologies, silicon carbide-based devices, and gallium arsenide materials and devices. These defects can profoundly affect the yield, performance, long-term reliability, and radiation response of microelectronic devices and integrated circuits (ICs). Organizing the material to build understanding of the problems and provide a quick reference for scientists, engineers and technologists, this text reviews yield- and performance-limiting defects and impurities in the device silicon layer, in the gate insulator, and/or at the critical Si/SiO2 interface. It then examines defects that impact production yield and long-term reliability, including:

• Vacancies, interstitials, and impurities (especially hydrogen)





• Negative bias temperature instabilities





• Defects in ultrathin oxides (SiO2 and silicon oxynitride)

Take A Proactive Approach The authors condense decades of experience and perspectives of noted experimentalists and theorists to characterize defect properties and their impact on microelectronic devices. They identify the defects, offering solutions to avoid them and methods to detect them. These include the use of 3-D imaging, as well as electrical, analytical, computational, spectroscopic, and state-of-the-art microscopic methods. This book is a valuable look at challenges to come from emerging

About the Author: Daniel M. Fleetwood, Sokrates T. Pantelides, Ronald D. Schrimpf

Bibliographic Details

Title: Defects in Microelectronic Materials and ...
Publisher: CRC Press
Publication Date: 2019
Binding: Soft cover
Condition: Bueno