Charge Plasma Induced Double Gate TFET as Biosensor

Language: English

Published by LAP LAMBERT Academic Publishing Mai 2025, 2025

6208011906 / 9786208011901

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Softcover

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This item is printed on demand - Print on Demand Titel. Neuware -This book presents a groundbreaking Dual Metal Double Gate Tunnel Field Effect Transistor (DM DG TFET) featuring a laterally divided dielectric gate oxide structure with a tunneling and auxiliary gate. By engineering gate oxides and work functions, the device achieves a sub-threshold swing below 90 mV/decade, high current ratio, and ultra-low OFF current. It explores the role of high-k dielectrics, doping, and gate potentials in optimizing performance. The research further introduces a charge plasma-based TFET for label-free biomolecule detection, demonstrating exceptional drain sensitivity and RF response. A Heterojunction Ferroelectric Charge Plasma TFET design enhances switching speed and biosensing accuracy. Bridging innovation with simulation, this work establishes TFETs as key components for next-generation electronics and biosensing technologies.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 172 pp. Englisch. …

Seller Inventory # 9786208011901

Title
Charge Plasma Induced Double Gate TFET as Biosensor
Author
Dipshika Das
Publisher
LAP LAMBERT Academic Publishing Mai 2025
Publication year
2025
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
6208011906
ISBN 13
9786208011901
Item weight
274 grams
Dimensions
220x150x11 mm

buchversandmimpf2000

Emtmannsberg, BAYE, Germany

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