Charge-Based MOS Transistor Mo

Language: English

Published by John Wiley & Sons Sep 2006, 2006

047085541X / 9780470855416

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Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH

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Neuware - Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters.Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine:\* the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties;\* the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices;\* the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits.Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.…

Seller Inventory # 9780470855416

Title
Charge-Based MOS Transistor Mo
Author
Enz
Publisher
John Wiley & Sons Sep 2006
Publication year
2006
Condition
Neu
Binding
Buch
Language
English
ISBN 10
047085541X
ISBN 13
9780470855416
Item weight
749 grams
Dimensions
250x175x22 mm

AHA-BUCH GmbH

Einbeck, Germany

5-star seller

AbeBooks seller since August 14, 2006

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