Bias-Temperature-Instabilities in MOSFETs with high-k dielectrics : Electrical behavior, modeling and process impact under Bias Temperature stress in high-k metal gated MOSFETs

Language: English

Published by LAP LAMBERT Academic Publishing, 2010

383836404X / 9783838364049

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Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH

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nach der Bestellung gedruckt Neuware - Printed after ordering - New MOSFET architectures are presently being developed in which dielectrics with high permittivity are introduced to replace SiO2-based dielectrics, which are at the end of the scaling roadmap, and where also metal gates are used to replace poly-Si gate to avoid poly-depletion effects. Key in the success of this development is the electrical behavior of such high k/metal gate devices, and more specifically the Bias-Temperature- Instabilities, which are well-known reliability problems in MOS gate stacks. In this thesis, these Bias-Temperature effects will be investigated: the electrical behavior of the devices under Bias- Temperature stress will be characterized, models to explain the instability effects will be developed, the impact of processing, material composition and deposition techniques, annealing conditions etc. will be investigated, and ways to improve these BTI effects will be proposed. This work should ultimately lead to optimized gate stacks with higher BTI robustness.…

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Title
Bias-Temperature-Instabilities in MOSFETs with high-k dielectrics : Electrical behavior, modeling and process impact under Bias Temperature stress in high-k metal gated MOSFETs
Author
Herman Maes
Publisher
LAP LAMBERT Academic Publishing
Publication year
2010
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
383836404X
ISBN 13
9783838364049
Item weight
352 grams
Dimensions
220x150x15 mm

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