This book describes analytical instruments widely used to characterize the nanostructured materials. It provides information about how to assess material quality, defects, the state of surfaces and interfaces, element distributions, strain, lattice distortion, and electro-optical properties of materials and devices. The information provided by this book can be used as a back-up for material processing, material design and debugging of device performance. The basic principles and methodology of each analysis technique is described in separate chapters, adding historic perspectives and recent developments. The data analysis, from simple to advanced level, is introduced by numerous examples, mostly taken from the authors' fields of research; semiconductor materials, metals and oxides.

The book serves as a valuable guide for scientists and students working in materials science, physics, and engineering, who wish to become acquainted with the most important analytical techniques for nanomaterials.

About the Author

Henry H. Radamson received his M.Sc. degree in physics and his Ph.D. degree in semiconductor materials from Link�ping University in Sweden, in 1989 and 1996, respectively. In 1997, he joined the KTH Royal Institute of Technology in Stockholm as a senior scientist. In 2016, he joined the Chinese Academy of Sciences Institute of Microelectronics. Henry Radamson is full professor of optoelectronics and since 2020 he is a member of the European Academy of Sciences. In the same year he became the director of optoelectronics in Guangdong Greater Bay Area Institute of Integrated Circuit and System. He has long time experience in teaching of semiconductor physics and his work in education has been awarded in China. He is author/co-author of several hundreds of scientific articles, several book chapters, and two books. He is a member of the Executive Committee of the European Material Society. His research is focused on nanoelectronics, nanophotonics and nanosensors.

AndersHall�n received his M.Sc. degree in electronic engineering 1985 and his PhD degree in ion physics 1990 from Uppsala University, Sweden. He started at The Royal Institute of Technology, KTH, in 1996 to work on silicon carbide material development for power semiconductor applications. His main research area involves material modification using ion beams, focusing on electrical properties of semiconductor materials. Since 2006, he is a professor at the Department of Electronics (KTH). He was also highly involved in the formation of the Ion Technology Centre (ITC) in 2001, a Swedish national platform for the application of ion beams located at Uppsala University and worked as manager for ITC 18 years. He is teaching at undergraduate level in areas of mathematics and physics and, at graduate level, on semiconductor materials, device physics and power semiconductor applications. His publication list includes over 250 articles in international journals, several book chapters and he has given numerous invited talks at international conferences, including several plenary contributions.

Ilya Sychugov received his Master degree in nuclear physics from Moscow Engineering Physics Institute in 2001 and obtained his PhD degree in solid state physics from KTH Royal Institute of Technology, Stockholm in 2007. After Postdoc experience in Japan with Nippon Telegraph, Telephone Basic Research Labs, and National Institute of Material Science, he jointed KTH as an Assistant Professor in 2011, and became an Associate Professor in 2015. His research interests include nanomaterials for light conversion applications and photonic nanostructures. He has co-authored about a hundred of scientific papers and had a dozen of invited talks at international conferences. Ilya Sychugov is involved in teaching of physics courses in all three educational cycles.

Alexander Azarov received his PhD degree with specialization in physics of semiconductors and physicalelectronics from St. Petersburg State Polytechnical University (Russia) in 2005. After that he worked several years as a researcher/process engineer at R&D company “Elar” specializing on the development and fabrication of CCD image sensors. In 2009 Dr. Azarov joined the University of Oslo in Norway after a postdoc position at Royal Institute of Technology, Sweden. Dr. Azarov is an expert in ion beam modification and ion-beam analysis of bulk materials, thin films, and nanostructures. At present the main area of his research activity is application motivated basic research focusing on defects diffusion and phase transformations in ion implanted materials including wide and ultra-wide bandgap semiconductors. Dr. Azarov has an active research collaboration with several research groups worldwide and he is author/co-author of more than 100 scientific papers in peer-reviewed journals.

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