Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications

Language: English

Published by Cuvillier Aug 2011, 2011

386955844X / 9783869558448

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Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.

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This item is printed on demand - it takes 3-4 days longer - Neuware -This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations. 130 pp. Englisch.

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Bibliographic details

Title
Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
Author
Michael Hosch
Publisher
Cuvillier Aug 2011
Publication year
2011
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
386955844X
ISBN 13
9783869558448
Item weight
179 grams
Dimensions
210x148x7 mm

BuchWeltWeit Ludwig Meier e.K.

Bergisch Gladbach, Germany

5-star seller

AbeBooks seller since January 11, 2012

Shipping rates from Germany to U.S.A.

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BuchWeltWeit Ludwig Meier e.K.

Germany