AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

Language: English

Published by Karlsruher Institut Für Technologie Jun 2011, 2011

3866446152 / 9783866446151

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This item is printed on demand - it takes 3-4 days longer - Neuware -This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs. 262 pp. Englisch.

Seller Inventory # 9783866446151

Title
AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
Author
Jutta Kühn
Publisher
Karlsruher Institut Für Technologie Jun 2011
Publication year
2011
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
3866446152
ISBN 13
9783866446151
Item weight
384 grams
Dimensions
210x148x17 mm

BuchWeltWeit Ludwig Meier e.K.

Bergisch Gladbach, Germany

5-star seller

AbeBooks seller since January 11, 2012

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