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Language:Chinese.paperback.Pub Date:2020-10-01.publisher:National Defense Industry Press.description:Paperback. Pub Date: 2020-10-01 Pages: 326 Language: Chinese Publisher: National Defense Industry Press Transistor Nonlinear Model Parameter Extraction Technology aims to provide a comprehensive overview of transistor model parameter extraction: On t
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Parameter Extraction Technology of Transistor Nonlinear Model(Chinese Edition)
Published by
National Defense Industry Press, 2020
ISBN 10: 7118120677
ISBN 13: 9787118120677
New
paperback
Seller: liu xing, Nanjing, JS, China
Seller rating 5 out of 5 stars
paperback. Condition: New. Paperback. Pub Date: 2020-10-01 Pages: 326 Language: Chinese Publisher: National Defense Industry Press Transistor Nonlinear Model Parameter Extraction Technology aims to provide a comprehensive overview of transistor model parameter extraction: On the one hand. the basic premise is the parameter The extraction is as important as the establishment of a physical model based on itself; on the other hand. even for different technologies. the extraction methods are often based on the same ideas a. Seller Inventory # NV037817