Language:Chinese.paperback.Pub Date:2024-01.publisher:Mechanical Industry Press.description:Paperback. Pub Date: 2024-01 Pages: 428 Publisher: China Machinery Industry Press Core Technology of Silicon Carbide Device Process has 9 chapters. focusing on the silicon carbide (SiC) device process. focusing on key process technologies such as SiC
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Seller: liu xing, Nanjing, JS, China
paperback. Condition: New. Language:Chinese.Paperback. Pub Date: 2024-01 Pages: 428 Publisher: China Machinery Industry Press Core Technology of Silicon Carbide Device Process has 9 chapters. focusing on the silicon carbide (SiC) device process. focusing on key process technologies such as SiC material growth. surface cleaning. ohmic contact. Schottky contact. ion implantation. dry etching. electrolyte preparation. as well as high-power SiC unipolar and bipolar switching devices. SiC nanostructure manufacturing and dev. Seller Inventory # DR007605