本书概述现代CMOS晶体管的技术发展,提出新的设计方法来改善晶体管性能存在的局限性。本书共四部分。一部分回顾了芯片设计的注意事项并且基准化了许多替代性的开关器件,重点论述了具有更陡峭亚阈值摆幅的器件。第二部分涵盖了利用量子力学隧道效应作为开关原理来实现更陡峭亚阈值摆幅的各种器件设计。第三部分涵盖了利用替代方法实现更高效开关性能的器件。第四部分涵盖了利用磁效应或电子自旋携带信息的器件。本书适合作为电子信息类专业与工程等专业的教材,也可作为相关专业人士的参考书。
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paperback. Condition: New. Language:Chinese.Paperback. Pub Date: 2018-04-01 Pages: 329 Publisher: mechanical industry publishing house book summary of the development of the technology of modern CMOS transistor. new design method was proposed to improve the disadvantage of the transistor performance.A total of four sections in the book.Part of a retrospect of the chip design considerations and benchmarking the many alternative switching devices. mainly discusses the more steep. Seller Inventory # NI075065
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