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Synopsis
The growth of one semiconductor on another known as Heteroepitaxy process which developed the production of a wide range of what so-called heteroepitaxial devices, such as high-brightness light-emitting diodes, lasers, and high frequency transistors. The development of devices using other materials is based on the choice of the substrate and is represented by the combination epitaxial layer/substrate. This combination using the growth process requires the realizing at the maximum the chemical and crystallographic compatibility in which the crystallographic orientation of the layer is exactly determined by the substrate crystal. The surface structure of the substrate crystal can have an important effect on the properties of the epitaxial crystal. In the other hand, homoepitaxy is another process differs from Heteroepitaxy, if substrate and layer are of the same chemical composition we speak of homoepitaxy such as GaAs/GaAs, and we speak of Heteroepitaxy, if the layer /substrate have different chemical composition such as InP/GaAs. This materials used to product LEDs high quality devises and transistors of high mobility.
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Crystal Growth and Characterization
Published by
LAP LAMBERT Academic Publishing Jan 2024, 2024
ISBN 10: 6207461657
ISBN 13: 9786207461653
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Taschenbuch
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware 64 pp. Englisch. Seller Inventory # 9786207461653
Quantity: 2 available
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Crystal Growth and Characterization
Published by
LAP LAMBERT Academic Publishing
ISBN 10: 6207461657
ISBN 13: 9786207461653
New
Taschenbuch
Seller: AHA-BUCH GmbH, Einbeck, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The growth of one semiconductor on another known as Heteroepitaxy process which developed the production of a wide range of what so-called heteroepitaxial devices, such as high-brightness light-emitting diodes, lasers, and high frequency transistors. The development of devices using other materials is based on the choice of the substrate and is represented by the combination epitaxial layer/substrate. This combination using the growth process requires the realizing at the maximum the chemical and crystallographic compatibility in which the crystallographic orientation of the layer is exactly determined by the substrate crystal. The surface structure of the substrate crystal can have an important effect on the properties of the epitaxial crystal. In the other hand, homoepitaxy is another process differs from Heteroepitaxy, if substrate and layer are of the same chemical composition we speak of homoepitaxy such as GaAs/GaAs, and we speak of Heteroepitaxy, if the layer /substrate have different chemical composition such as InP/GaAs. This materials used to product LEDs high quality devises and transistors of high mobility. Seller Inventory # 9786207461653
Quantity: 1 available
Seller Image
Crystal Growth and Characterization
Published by
LAP LAMBERT Academic Publishing Jan 2024, 2024
ISBN 10: 6207461657
ISBN 13: 9786207461653
New
Taschenbuch
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. Neuware -The growth of one semiconductor on another known as Heteroepitaxy process which developed the production of a wide range of what so-called heteroepitaxial devices, such as high-brightness light-emitting diodes, lasers, and high frequency transistors. The development of devices using other materials is based on the choice of the substrate and is represented by the combination epitaxial layer/substrate. This combination using the growth process requires the realizing at the maximum the chemical and crystallographic compatibility in which the crystallographic orientation of the layer is exactly determined by the substrate crystal. The surface structure of the substrate crystal can have an important effect on the properties of the epitaxial crystal. In the other hand, homoepitaxy is another process differs from Heteroepitaxy, if substrate and layer are of the same chemical composition we speak of homoepitaxy such as GaAs/GaAs, and we speak of Heteroepitaxy, if the layer /substrate have different chemical composition such as InP/GaAs. This materials used to product LEDs high quality devises and transistors of high mobility.Books on Demand GmbH, Überseering 33, 22297 Hamburg 64 pp. Englisch. Seller Inventory # 9786207461653
Quantity: 2 available