Magnetoresistive Random Access Memory: Tunnel magnetoresistance, Magnetic core memory, Electromagnetic induction, Electron, Phase-change memory, Giant ... Non-volatile random access memory - Softcover

 
9786130212872: Magnetoresistive Random Access Memory: Tunnel magnetoresistance, Magnetic core memory, Electromagnetic induction, Electron, Phase-change memory, Giant ... Non-volatile random access memory
Softcover
ISBN 10: 6130212879 ISBN 13: 9786130212872
Publisher: Alphascript Publishing, 2010

Synopsis

Please note that the content of this book primarily consists of articles available from Wikipedia or other free sources online. Magnetoresistive Random Access Memory is a non-volatile computer memory (NVRAM) technology, which has been under development since the 1990s. Continued increases in density of existing memory technologies – notably Flash RAM and DRAM – kept it in a niche role in the market, but its proponents believe that the advantages are so overwhelming that Magnetoresistive RAM will eventually become dominant for all types of memory, becoming a true universal memory.

"synopsis" may belong to another edition of this title.

Reseña del editor

Please note that the content of this book primarily consists of articles available from Wikipedia or other free sources online. Magnetoresistive Random Access Memory is a non-volatile computer memory (NVRAM) technology, which has been under development since the 1990s. Continued increases in density of existing memory technologies – notably Flash RAM and DRAM – kept it in a niche role in the market, but its proponents believe that the advantages are so overwhelming that Magnetoresistive RAM will eventually become dominant for all types of memory, becoming a true universal memory.

"About this title" may belong to another edition of this title.

Publisher
Alphascript Publishing
Publication date
2010
Language
English
ISBN 10 
6130212879
ISBN 13 
9786130212872
Binding
Tapa blanda
Number of pages
124
Editor
Miller Frederic P., Vandome Agnes F., McBrewster John