Investigations on In2S3 Layers Grown by Close Spaced Evaporation: Physical and Chemical Properties of As-grown and Annealed Films - Softcover

Ramakrishna Reddy, K. T.; Revathi, N.

Softcover

ISBN 10: 3846534536 ISBN 13: 9783846534533

Publisher: LAP LAMBERT Academic Publishing, 2011

Synopsis

Polycrystalline thin film solar cells based on CuInGaSe2 (CIGS) and CdTe as absorber layers have been developed with efficiencies < 15% using CdS as the buffer layer. However, the usage of CdS in these devices is harmful to the environment and has the potential to cause the manufacture problems due to the toxicity of ‘Cd’. Further, the collection efficiency of these solar cells is limited due to the narrow band gap of CdS (2.42 eV). Therefore, in order to improve the collection efficiency, to enhance the feasibility of manufacturing and to avoid environmental problems, it is desirable to replace CdS with a wide band gap material with appropriate properties. In this direction, novel materials have been proposed to replace the conventional CdS and In2S3 is one of the prominent alternatives. In this study, In2S3 films were grown by close spaced evaporation. The physical and chemical properties were investigated in relation to substrate temperature, film thickness and annealing in order to study the behavior of these films for their application as a buffer layer in solar cells.

About this title

About the Author

K. T. Ramakrishna Reddy is working as Professor of Physics at Sri Venkateswara University, Tirupati, India. He worked at various leading research laboratories in UK, Germany, Italy, Israel, China and Japan under different prestigious fellowships. He supervised 10 Ph. D. students, published 150 papers, carried out many projects and has a UK patent.

Edition details

• Publisher: LAP LAMBERT Academic Publishing
• Publication date: 2011
• Language: English
• ISBN 10: 3846534536
• ISBN 13: 9783846534533
• Binding: Paperback
• Number of pages: 132