Passivation Kinetics at Semiconductor Interfaces: Interaction of hydrogen with GaAs surfaces and Si/SiO2 interfaces - Softcover
Synopsis
This work describes the interaction of atomic hydrogen with defects at GaAs surfaces and Si/SiO2 interfaces. By continuously monitoring the photoluminescence of a GaAs wafer in a discharge-flow system it was observed that there was an initial irreversible passivation of the surface in the presence of the hydrogen atoms. This was followed by an improved, reversible passivation that occurred when the exposure to atomic hydrogen was discontinued. Similar results were obtained when the concentration of defects at the interface of Si/SiO2 was monitored continuously, in situ, with a remote radio frequency (RF) probe that measured the steady-state photogenerated carriers. By comparing the GaAs and Si/SiO2 systems it was concluded that hydrogen atoms could be trapped at interstitial sites near both interfaces. The reaction of molecular hydrogen with defects at Si/SiO2 interfaces was also investigated using the RF-probe. The results indicated the presence of other interfacial defects that react with H2, which could not be detected in earlier electron paramagnetic resonance studies.
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About the Author
Ligia Gheorghita, PhD. MSc at the University of Guelph, Ontario. PhD inPhysical Chemistry at the University of British Columbia, Vancouver, Canada.
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Passivation Kinetics at Semiconductor Interfaces
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LAP LAMBERT Academic Publishing Jul 2011, 2011
ISBN 10: 3844382232
ISBN 13: 9783844382235
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This work describes the interaction of atomic hydrogen with defects at GaAs surfaces and Si/SiO2 interfaces. By continuously monitoring the photoluminescence of a GaAs wafer in a discharge-flow system it was observed that there was an initial irreversible passivation of the surface in the presence of the hydrogen atoms. This was followed by an improved, reversible passivation that occurred when the exposure to atomic hydrogen was discontinued. Similar results were obtained when the concentration of defects at the interface of Si/SiO2 was monitored continuously, in situ, with a remote radio frequency (RF) probe that measured the steady-state photogenerated carriers. By comparing the GaAs and Si/SiO2 systems it was concluded that hydrogen atoms could be trapped at interstitial sites near both interfaces. The reaction of molecular hydrogen with defects at Si/SiO2 interfaces was also investigated using the RF-probe. The results indicated the presence of other interfacial defects that react with H2, which could not be detected in earlier electron paramagnetic resonance studies. 168 pp. Englisch. Seller Inventory # 9783844382235
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Passivation Kinetics at Semiconductor Interfaces
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ISBN 10: 3844382232
ISBN 13: 9783844382235
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Gheorghita LigiaLigia Gheorghita, PhD. MSc at the University of Guelph, Ontario. PhD inPhysical Chemistry at the University of British Columbia, Vancouver, Canada.This work describes the interaction of atomic hydrogen with defect. Seller Inventory # 5475752
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Passivation Kinetics at Semiconductor Interfaces
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Passivation Kinetics at Semiconductor Interfaces
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Passivation Kinetics at Semiconductor Interfaces
Published by
VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2011
ISBN 10: 3844382232
ISBN 13: 9783844382235
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Softcover
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Passivation Kinetics at Semiconductor Interfaces
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LAP LAMBERT Academic Publishing Jul 2011, 2011
ISBN 10: 3844382232
ISBN 13: 9783844382235
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This work describes the interaction of atomic hydrogen with defects at GaAs surfaces and Si/SiO2 interfaces. By continuously monitoring the photoluminescence of a GaAs wafer in a discharge-flow system it was observed that there was an initial irreversible passivation of the surface in the presence of the hydrogen atoms. This was followed by an improved, reversible passivation that occurred when the exposure to atomic hydrogen was discontinued. Similar results were obtained when the concentration of defects at the interface of Si/SiO2 was monitored continuously, in situ, with a remote radio frequency (RF) probe that measured the steady-state photogenerated carriers. By comparing the GaAs and Si/SiO2 systems it was concluded that hydrogen atoms could be trapped at interstitial sites near both interfaces. The reaction of molecular hydrogen with defects at Si/SiO2 interfaces was also investigated using the RF-probe. The results indicated the presence of other interfacial defects that react with H2, which could not be detected in earlier electron paramagnetic resonance studies.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 168 pp. Englisch. Seller Inventory # 9783844382235
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Passivation Kinetics at Semiconductor Interfaces : Interaction of hydrogen with GaAs surfaces and Si/SiO2 interfaces
Published by
LAP LAMBERT Academic Publishing, 2011
ISBN 10: 3844382232
ISBN 13: 9783844382235
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Taschenbuch
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This work describes the interaction of atomic hydrogen with defects at GaAs surfaces and Si/SiO2 interfaces. By continuously monitoring the photoluminescence of a GaAs wafer in a discharge-flow system it was observed that there was an initial irreversible passivation of the surface in the presence of the hydrogen atoms. This was followed by an improved, reversible passivation that occurred when the exposure to atomic hydrogen was discontinued. Similar results were obtained when the concentration of defects at the interface of Si/SiO2 was monitored continuously, in situ, with a remote radio frequency (RF) probe that measured the steady-state photogenerated carriers. By comparing the GaAs and Si/SiO2 systems it was concluded that hydrogen atoms could be trapped at interstitial sites near both interfaces. The reaction of molecular hydrogen with defects at Si/SiO2 interfaces was also investigated using the RF-probe. The results indicated the presence of other interfacial defects that react with H2, which could not be detected in earlier electron paramagnetic resonance studies. Seller Inventory # 9783844382235