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Improved Performance of AlGaInP LEDs Using Various Process Techniques: The main purpose of this book is to improve external quantum efficiency of LEDs ... several different fabrication methods - Softcover
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Recently, based on the significant improvement on epitaxy technique of metal organic chemical vapor deposition (MOCVD), the internal quantum efficiency of AlGaInP-based LEDs has reached near 100%. However, a significant challenge in the development of high-efficiency and high-power AlGaInP LEDs is the extraction of light emitted from the semiconductor material into the surrounding media. The main purpose of this book is to improve the light output of LEDs using various process techniques, which can help increase the light output of LEDs. In this book, we have developed several fabrication processes to improve the light output of the AlGaInP LED. First, a 1mm × 1mm AlGaInP LED sandwiched by ITO omni-directional reflector (ODR) and current-spreading layer is presented. Secondly, an AlGaInP ODR-LED with a two- dimensional ?wavelike? surface was fabricated. Moreover, the heavily carbon- doped GaP contact layer has been developed for the absorbing-substrate AlGaInP LEDs using the ITO as the current-spreading layer and transparent ohmic contact.
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About the Author
Shun-Cheng Hsu received Ph.D. degree in deparment of materials science and egineering from National Chung Hsing University, Taiwan, R.O.C. in 2009.
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Improved Performance of AlGaInP LEDs Using Various Process Techniques
Published by
LAP LAMBERT Academic Publishing, 2010
ISBN 10: 3843358362
ISBN 13: 9783843358361
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Seller: Twice Sold Tales, Capitol Hill, Seattle, WA, U.S.A.
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Improved Performance of AlGaInP LEDs Using Various Process Techniques
Published by
LAP LAMBERT Academic Publishing Okt 2010, 2010
ISBN 10: 3843358362
ISBN 13: 9783843358361
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Recently, based on the significant improvement on epitaxy technique of metal organic chemical vapor deposition (MOCVD), the internal quantum efficiency of AlGaInP-based LEDs has reached near 100%. However, a significant challenge in the development of high-efficiency and high-power AlGaInP LEDs is the extraction of light emitted from the semiconductor material into the surrounding media. The main purpose of this book is to improve the light output of LEDs using various process techniques, which can help increase the light output of LEDs. In this book, we have developed several fabrication processes to improve the light output of the AlGaInP LED. First, a 1mm × 1mm AlGaInP LED sandwiched by ITO omni-directional reflector (ODR) and current-spreading layer is presented. Secondly, an AlGaInP ODR-LED with a two- dimensional wavelike surface was fabricated. Moreover, the heavily carbon- doped GaP contact layer has been developed for the absorbing-substrate AlGaInP LEDs using the ITO as the current-spreading layer and transparent ohmic contact. 132 pp. Englisch. Seller Inventory # 9783843358361
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Improved Performance of AlGaInP LEDs Using Various Process Techniques : The main purpose of this book is to improve external quantum efficiency of LEDs by investigating several different fabrication methods
Published by
LAP LAMBERT Academic Publishing, 2010
ISBN 10: 3843358362
ISBN 13: 9783843358361
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Recently, based on the significant improvement on epitaxy technique of metal organic chemical vapor deposition (MOCVD), the internal quantum efficiency of AlGaInP-based LEDs has reached near 100%. However, a significant challenge in the development of high-efficiency and high-power AlGaInP LEDs is the extraction of light emitted from the semiconductor material into the surrounding media. The main purpose of this book is to improve the light output of LEDs using various process techniques, which can help increase the light output of LEDs. In this book, we have developed several fabrication processes to improve the light output of the AlGaInP LED. First, a 1mm × 1mm AlGaInP LED sandwiched by ITO omni-directional reflector (ODR) and current-spreading layer is presented. Secondly, an AlGaInP ODR-LED with a two- dimensional wavelike surface was fabricated. Moreover, the heavily carbon- doped GaP contact layer has been developed for the absorbing-substrate AlGaInP LEDs using the ITO as the current-spreading layer and transparent ohmic contact. Seller Inventory # 9783843358361
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Improved Performance of AlGaInP LEDs Using Various Process Techniques
Published by
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ISBN 10: 3843358362
ISBN 13: 9783843358361
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Hsu Shun-ChengShun-Cheng Hsu received Ph.D. degree in deparment of materials science and egineering from National Chung Hsing University, Taiwan, R.O.C. in 2009.Recently, based on the significant improvement on epitaxy techniq. Seller Inventory # 5465813
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Improved Performance of AlGaInP LEDs Using Various Process Techniques
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Improved Performance of AlGaInP LEDs Using Various Process Techniques
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Improved Performance of AlGaInP LEDs Using Various Process Techniques
Published by
LAP LAMBERT Academic Publishing Okt 2010, 2010
ISBN 10: 3843358362
ISBN 13: 9783843358361
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Taschenbuch. Condition: Neu. Neuware -Recently, based on the significant improvement on epitaxy technique of metal organic chemical vapor deposition (MOCVD), the internal quantum efficiency of AlGaInP-based LEDs has reached near 100%. However, a significant challenge in the development of high-efficiency and high-power AlGaInP LEDs is the extraction of light emitted from the semiconductor material into the surrounding media. The main purpose of this book is to improve the light output of LEDs using various process techniques, which can help increase the light output of LEDs. In this book, we have developed several fabrication processes to improve the light output of the AlGaInP LED. First, a 1mm × 1mm AlGaInP LED sandwiched by ITO omni-directional reflector (ODR) and current-spreading layer is presented. Secondly, an AlGaInP ODR-LED with a two- dimensional ¿wavelike¿ surface was fabricated. Moreover, the heavily carbon- doped GaP contact layer has been developed for the absorbing-substrate AlGaInP LEDs using the ITO as the current-spreading layer and transparent ohmic contact.Books on Demand GmbH, Überseering 33, 22297 Hamburg 132 pp. Englisch. Seller Inventory # 9783843358361
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Improved Performance of AlGaInP LEDs Using Various Process Techniques
Published by
VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2010
ISBN 10: 3843358362
ISBN 13: 9783843358361
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Improved Performance of AlGaInP LEDs Using Various Process Techniques
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ISBN 10: 3843358362
ISBN 13: 9783843358361
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