Diplomarbeit, die am 29.03.2001 erfolgreich an einer Technische Universität in Deutschland eingereicht wurde. Abstract: The Bluetooth wireless technology is the worlds new short-range RF transmission standard for small form factor, low-cost, short-range radio links between portable or desktop devices. The technology promises to eliminate the confusion of cables, connectors and protocols confounding communications between today high tech products. In the first step a 2.45 GHz Low Noise Amplifier (LNA), intended for use in a Bluetooth receiver, has been designed in a standard 0.18 um CMOS process. The amplifier provides a simulated switchable forward voltage gain of +16 / -7.7 dB with a simulated noise Figure (NF) of only 3 dB while drawing 2.8 mA from a 1.8 V supply. The die area of the LNA (pads included) is 0.79 mm2. In the second step a 2.45 GHz Power Amplifier (PA), also intended for the Bluetooth standard, has been designed in the same 0.18 um CMOS process as for the LNA. The class-A PA achieves a simulated forward gain (S21) of 23 dB and a simulated output 1 dB compression point (P1dB ) of 5.5 dBm, with a power-added efficiency (PAE) of 23 % while drawing 15.8 mA from a 1.8 V supply. The die area of the PA (pads included) is 2.1 mm2. Table of Contents: 1.|Introduction|1 1.1|Motivation|1 1.2|Organization|2 2.|The Bluetooth standard|3 2.1|Bluetooth as branding-name|3 2.2|Bluetooth RF requirements|4 2.3|System design|4 2.3.1|Receiver architectures|4 2.3.2|Transmitter architectures|6 3.|RF CMOS technology|9 3.1|The foundry|9 3.1.1|Technology overview|9 3.1.2|Process Characteristic|9 3.2|Design Flow|10 3.2.1|Cadence|10 3.2.2|SpectreRF|10 4.|Integrated spiral inductors|11 4.1|View and physical dimension of spiral|11 4.2|Model for on-chip spiral inductors|12 5.|Low Noise Amplifier|13 5.1|Architecture choices|13 5.1.1|Recent studies|13 5.1.2|LNA Architectures|13 5.1.3|Architecture properties|14 5.1.4|Architec
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Diplomarbeit, die am 29.03.2001 erfolgreich an einer Technische Universität in Deutschland eingereicht wurde. Abstract: The Bluetooth wireless technology is the worlds new short-range RF transmission standard for small form factor, low-cost, short-range radio links between portable or desktop devices. The technology promises to eliminate the confusion of cables, connectors and protocols confounding communications between today high tech products. In the first step a 2.45 GHz Low Noise Amplifier (LNA), intended for use in a Bluetooth receiver, has been designed in a standard 0.18 um CMOS process. The amplifier provides a simulated switchable forward voltage gain of +16 / -7.7 dB with a simulated noise Figure (NF) of only 3 dB while drawing 2.8 mA from a 1.8 V supply. The die area of the LNA (pads included) is 0.79 mm2. In the second step a 2.45 GHz Power Amplifier (PA), also intended for the Bluetooth standard, has been designed in the same 0.18 um CMOS process as for the LNA. The class-A PA achieves a simulated forward gain (S21) of 23 dB and a simulated output 1 dB compression point (P1dB ) of 5.5 dBm, with a power-added efficiency (PAE) of 23 % while drawing 15.8 mA from a 1.8 V supply. The die area of the PA (pads included) is 2.1 mm2. Table of Contents: 1.|Introduction|1 1.1|Motivation|1 1.2|Organization|2 2.|The Bluetooth standard|3 2.1|Bluetooth as branding-name|3 2.2|Bluetooth RF requirements|4 2.3|System design|4 2.3.1|Receiver architectures|4 2.3.2|Transmitter architectures|6 3.|RF CMOS technology|9 3.1|The foundry|9 3.1.1|Technology overview|9 3.1.2|Process Characteristic|9 3.2|Design Flow|10 3.2.1|Cadence|10 3.2.2|SpectreRF|10 4.|Integrated spiral inductors|11 4.1|View and physical dimension of spiral|11 4.2|Model for on-chip spiral inductors|12 5.|Low Noise Amplifier|13 5.1|Architecture choices|13 5.1.1|Recent studies|13 5.1.2|LNA Architectures|13 5.1.3|Architecture properties|14 5.1.4|Architec
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Diploma Thesis from the year 2001 in the subject Electrotechnology, grade: 1,0, Technical University of Munich (unbekannt), language: English, abstract: Inhaltsangabe:Abstract:The Bluetooth wireless technology is the worlds new short-range RF transmission standard for small form factor, low-cost, short-range radio links between portable or desktop devices. The technology promises to eliminate the confusion of cables, connectors and protocols confounding communications between today high tech products.In the first step a 2.45 GHz Low Noise Amplifier (LNA), intended for use in a Bluetooth receiver, has been designed in a standard 0.18 um CMOS process. The amplifier provides a simulated switchable forward voltage gain of +16 / -7.7 dB with a simulated noise Figure (NF) of only 3 dB while drawing 2.8 mA from a 1.8 V supply. The die area of the LNA (pads included) is 0.79 mm2.In the second step a 2.45 GHz Power Amplifier (PA), also intended for the Bluetooth standard, has been designed in the same 0.18 um CMOS process as for the LNA. The class-A PA achieves a simulated forward gain (S21) of 23 dB and a simulated output 1 dB compression point (P1dB ) of 5.5 dBm, with a power-added efficiency (PAE) of 23 % while drawing 15.8 mA from a 1.8 V supply. The die area of the PA (pads included) is 2.1 mm2.Inhaltsverzeichnis:Table of Contents:1.Introduction11.1Motivation11.2Organization22.The Bluetooth standard32.1Bluetooth as branding-name32.2Bluetooth RF requirements42.3System design42.3.1Receiver architectures42.3.2Transmitter architectures63.RF CMOS technology93.1The foundry93.1.1Technology overview93.1.2Process Characteristic93.2Design Flow103.2.1Cadence103.2.2SpectreRF104.Integrated spiral inductors114.1View and physical dimension of spiral114.2Model for on-chip spiral inductors125.Low Noise Amplifier135.1Architecture choices135.1.1Recent studies135.1.2LNA Architectures135.1.3Architecture properties145.1.4Architecture choice145.2A little piece of theory155.2.1Standard MOS noise model155.2.2Noise Figure165.2.3Input impedance165.2.4Voltage Gain185.2.5Stability195.2.6Noise Figure205.3Design approach for the LNA215.3.1Circuit topology215.3.2RF circuit design strategy215.3.3DC operating point design strategy235.3.4Input matching245.3.5Voltage gain255.3.6Noise Figure265.3.7Stability275.3.8LNA core schematics with component values285.4Design approach for the attenuation path of the LNA295.4.1Circuit Topology295.4.2Switching network295.4.3Input matching315.4.4Attenuation325.4.5Switchable LNA schematics with component values335.5Summary of simulation335.6Layout345.7Measurement approach365.7.1Simulation results365.7.2Summary of simulation396.Power Amplifier416.1Architecture choices416.1.1Recent studies416.1.2PA classification426.1.3Architecture choice426.2A little piece of theory446.2.1Efficiency definitions446.2.2Class-A power amplifier446.2.3Loadline theory466.3Design approach for the PA466.3.1Design approach for the output stage466.3.2Design approach for the interstage matching496.3.3Design approach for the input496.3.4Stability506.3.5PA schematics with component values506.4Measurement approach526.4.1Simulation results526.4.2Summary of simulation results556.5Layout55Bibliography57Abbreviation and symbols61Conceptual formulation63Curriculum vitae65 80 pp. Englisch. Seller Inventory # 9783838641942
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