Design of SOI LDMOS for Base station and Wireless SOC Applications - Softcover

Sithanandam, Radhakrishnan

Softcover

ISBN 10: 3838361547 ISBN 13: 9783838361543

Publisher: LAP LAMBERT Academic Publishing, 2012

Synopsis

Laterally Double Diffused MOSFET (LDMOS), a medium power semiconducting device, finds its place as a key amplifying device in RF Power Amplifiers and switching device in Power Management Circuits in System on Chips (SOC). The increasing market in these areas fuelled the research of these devices, and hence device level optimization of LDMOS gained key importance. This work solves three main challenges, as follows, 1) Can a non-linear semiconducting device like LDMOS, be made as an ideal amplifying device with linear transfer characteristics? 2) Can the breakdown voltage be increased in thin film SOI LDMOS, without the expense of other performance parameters? 3) Can scaling continue for better Power Performance & Area (PPA) in SOI technology, without degrading the high voltage operation of Fully Depleted SOI LDMOS?. All the above mentioned challenges are systematically studied and analyzed. New device architectures are also proposed to enhance the device performance and substantiated with extensive TCAD device simulations.

About this title

About the Author

Radhakrishnan S received his M.S. by Research in Electrical Engineering from Indian Institute of Technology (IITD), Delhi, India. He is currently working as Senior Design Engineer in ST Microelectronics India and also pursuing his PhD from IITD. He has published about eight papers in various international referred journals and conferences.

Edition details

• Publisher: LAP LAMBERT Academic Publishing
• Publication date: 2012
• Language: English
• ISBN 10: 3838361547
• ISBN 13: 9783838361543
• Binding: Paperback
• Number of pages: 136