High-k materials in Dynamic Random Access Memories (DRAM): Atomic scale engineering of HfO2-based dielectrics for future DRAM applications - Softcover
Synopsis
I would like to give you an outstanding opportunity to experience more about modern materials for Dynamic Random Access Memories. Therefore I give this book into your hands. You will find here a theory chapter focusing on DRAM physics as well as a deep description of deposition and characterization methods used in this work. Finally, you will discover how to engineer materials on an atomic scale and how to investigate those thin films.
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About the Author
Born 1983 in Bogatynia,Poland.1992-1999 primary school in Bogatynia,1999-2002 secondary school in Bogatynia,2002-2007 Faculty of Microsystems, Electronics, Photonics, Wroclaw University of Technology,2004-2009 Faculty of Foreign Languages, Wroclaw University,2007-2011 BTU Cottbus Germany, PhD in experimental Physics
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High-k materials in Dynamic Random Access Memories (DRAM): Atomic scale engineering of HfO2-based dielectrics for future DRAM applications
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Südwestdeutscher Verlag für Hochschulschriften, 2011
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High-k materials in Dynamic Random Access Memories (DRAM)
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High-k materials in Dynamic Random Access Memories (DRAM)
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Highk materials in Dynamic Random Access Memories DRAM Atomic scale engineering of HfO2based dielectrics for future DRAM applications
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ISBN 13: 9783838130187
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -I would like to give you an outstanding opportunity to experience more about modern materials for Dynamic Random Access Memories. Therefore I give this book into your hands. You will find here a theory chapter focusing on DRAM physics as well as a deep description of deposition and characterization methods used in this work. Finally, you will discover how to engineer materials on an atomic scale and how to investigate those thin films. 112 pp. Englisch. Seller Inventory # 9783838130187