During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation.

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This book describes analytical compact transistor models that can be used in circuit simulation programs like SPICE. It provides the reader with a thorough knowledge of many aspects of compact models. The book starts with the necessary device physics: Boltzmann transport equation, continuity equation, Poisson equation and physical modelling of mobility, recombination, bandgap narrowing, avalanche multiplication and noise. Then a systematic treatment of the analytical formulas that describe the device behaviour in d.c., a.c. and transient situations is given for both bipolar and MOST devices. The book contains complete sets of model equations for various models, including some new ones, and special attention is paid to the numerical problems of analytical continuity. Separate chapters are devoted to parameter determination, the parameter temperature dependence as well as their relation to process variables, the statistical correlations between parameters, the scaling rules for submicron devices, the side wall effects and the parasitics. The book thus contains all the relevant aspects of compact transistor modelling for integrated circuit design and serves as a state-of-the-art description in compact modelling.

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**Book Description **Springer-Verlag KG Dez 2013, 2013. Taschenbuch. Book Condition: Neu. 249x175x22 mm. Neuware - During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation. 351 pp. Englisch. Bookseller Inventory # 9783709190456

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**Book Description **Springer-Verlag KG Dez 2013, 2013. Taschenbuch. Book Condition: Neu. 249x175x22 mm. Neuware - During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation. 351 pp. Englisch. Bookseller Inventory # 9783709190456

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**Book Description **Springer-Verlag KG Dez 2013, 2013. Taschenbuch. Book Condition: Neu. 249x175x22 mm. Neuware - During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation. 351 pp. Englisch. Bookseller Inventory # 9783709190456

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**Book Description **Springer-Verlag KG Dez 2013, 2013. Taschenbuch. Book Condition: Neu. 249x175x22 mm. Neuware - During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation. 351 pp. Englisch. Bookseller Inventory # 9783709190456

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**Book Description **Book Condition: New. Publisher/Verlag: Springer, Wien | During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation. | 1 Introduction.- 1.1 Compact Models.- 1.1.1 Models Based on Device Physics.- 1.1.2 Numerical Table Models.- 1.1.3 Empirical Models.- 1.2 Compact Models and Simulation Programs.- 1.3 Subjects Treated in This Book.- References.- 2 Some Basic Semiconductor Physics.- 2.1 Quantum-Mechanical Concepts.- 2.2 Distribution Function and Carrier Concentration.- 2.3 The Boltzmann Transport Equation.- 2.4 Bandgap Narrowing.- 2.5 Mobility and Resistivity in Silicon.- 2.6 Recombination.- 2.7 Avalanche Multplication.- 2.8 Noise Sources.- 2.8.1 Shot Noise.- 2.8.2 Diffusion Noise and Thermal Noise.- 2.8.3 Flicker Noise.- References.- 3 Modelling of Bipolar Device Phenomena.- 3.1 Injection and Transport Models.- 3.1.1 Solution of the Continuity Equations.- 3.1.2 Injection Model.- 3.1.3 Transport Model.- 3.2 The Quasi-Static Approximation and the Charge Control Principle.- 3.3 Collector Currents and Stored Charges.- 3.3.1 General Relation Between Collector Current and Charges.- 3.3.2 The Integral Charge Control Relation.- 3.3.3 Current, Charges and Minority Carrier Concentrations.- 3.3.3.1 The Low-Injection Case: n(x) " Na(x).- 3.3.3.2 The High-Injection Case: n(x) " Na(x).- 3.3.3.3 The General Case.- 3.4 Base Currents.- 3.5 Depletion Charges and Capacitances.- 3.5.1 Influence of Current on QTc.- 3.6 Early Effect.- 3.7 Quasi-Saturation, Base Widening and Kirk Effect.- 3.7.1 The Charge Storage in the Epilayer.- 3.7.2 Influence of Ic: Ohmic and Hot Carrier Behaviour (Kirk Effect).- 3.7.3 Inverse Mode of Operation.- 3.8 Avalanche Multiplication.- 3.9 Series Resistances.- 3.9.1 Emitter Series Resistance.- 3.9.2 Base Resistance.- 3.9.3 Collector Series Resistance.- 3.10 Time- and Frequency-Dependent Behaviour.- 3.10.1 Charge Control and Quasi-Static Approach.- 3.10.2 Exact One-Dimensional Solution.- 3.10.3 Time Delays.- 3.10.4 Base Charge Partitioning.- 3.10.5 Second-Order Differential Operators.- 3.11 Transit Time and Cut-Off Frequency fT.- 3.12 Noise Behaviour.- 3.13 Temperature Dependences.- References.- 4 Compact Models for Vertical Bipolar Transistors.- 4.1 Ebers-Moll-Type Models.- 4.1.1 Basic Ebers-Moll Model.- 4.1.2 Extensions of the Basic Ebers-Moll Model.- 4.1.3 Temperature Dependence of the Parameters.- 4.1.4 Typical Results.- 4.2 Gummel-Poon-Type Models.- 4.2.1 Basic Gummel-Poon Model.- 4.2.2. Bookseller Inventory # K9783709190456

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