Strain-Induced Effects in Advanced MOSFETs: 0 (Computational Microelectronics) - Hardcover

Book 3 of 17: Computational Microelectronics

Sverdlov, Viktor

 
9783709103814: Strain-Induced Effects in Advanced MOSFETs: 0 (Computational Microelectronics)

Synopsis

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

"synopsis" may belong to another edition of this title.

From the Back Cover

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given

"About this title" may belong to another edition of this title.

Other Popular Editions of the Same Title

9783709119334: Strain-Induced Effects in Advanced MOSFETs: 0 (Computational Microelectronics)

Featured Edition

ISBN 10:  3709119332 ISBN 13:  9783709119334
Publisher: Springer, 2016
Softcover