Synopsis
In spite of the recent p-type oxide TFTs developments based on SnO and CuO, the results achieved so far refer to devices processed at high temperatures and are limited by a low hole mobility and a low On-Off ratio and still there is no report on p-type oxide TFTs with performance similar to n-type TFTs. Achieving high performance p-type oxide TFTs will definitely promote a new era for electronics in rigid and flexible substrates, away from silicon. None of the few reported p-channel oxide TFTs is suitable for practical applications, which demand significant improvements in the device engineering to meet the real-world electronic requirements, where low processing temperatures together with high mobility and high On-Off ratio are required for TFT and CMOS applications. The present book presents the study and optimization of p-type TFTs based on oxide semiconductors deposited by r.f. magnetron sputtering without intentional substrate heating. In this work several p-type oxide semiconductors were studied and optimized based on undoped SnO, Cu-doped SnO and In-doped SnO.
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About the Author
Raquel Barros received her degree in Physics Engineering from Universidade de Lisboa, her Master in Microelectronic Engineering and Nanotechnologies and PhD in Nanotechnology and Nanoscience from Universidade Nova de Lisboa. She is currently working on the development of transparent Microelectromechanical systems to apply in biological systems.
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Development of p-type oxide TFTs based on SnO and its alloys
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LAP LAMBERT Academic Publishing Sep 2015, 2015
ISBN 10: 3659705136
ISBN 13: 9783659705137
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In spite of the recent p-type oxide TFTs developments based on SnO and CuO, the results achieved so far refer to devices processed at high temperatures and are limited by a low hole mobility and a low On-Off ratio and still there is no report on p-type oxide TFTs with performance similar to n-type TFTs. Achieving high performance p-type oxide TFTs will definitely promote a new era for electronics in rigid and flexible substrates, away from silicon. None of the few reported p-channel oxide TFTs is suitable for practical applications, which demand significant improvements in the device engineering to meet the real-world electronic requirements, where low processing temperatures together with high mobility and high On-Off ratio are required for TFT and CMOS applications. The present book presents the study and optimization of p-type TFTs based on oxide semiconductors deposited by r.f. magnetron sputtering without intentional substrate heating. In this work several p-type oxide semiconductors were studied and optimized based on undoped SnO, Cu-doped SnO and In-doped SnO. 204 pp. Englisch. Seller Inventory # 9783659705137
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Development of p-type oxide TFTs based on SnO and its alloys
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Barros RaquelRaquel Barros received her degree in Physics Engineering from Universidade de Lisboa, her Master in Microelectronic Engineering and Nanotechnologies and PhD in Nanotechnology and Nanoscience from Universidade Nova de Lis. Seller Inventory # 159143937
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Development of p-type oxide TFTs based on SnO and its alloys
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LAP LAMBERT Academic Publishing, 2015
ISBN 10: 3659705136
ISBN 13: 9783659705137
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Taschenbuch. Condition: Neu. Development of p-type oxide TFTs based on SnO and its alloys | Raquel Barros | Taschenbuch | 204 S. | Englisch | 2015 | LAP LAMBERT Academic Publishing | EAN 9783659705137 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu. Seller Inventory # 104189418
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Development of p-type oxide TFTs based on SnO and its alloys
Published by
LAP LAMBERT Academic Publishing Sep 2015, 2015
ISBN 10: 3659705136
ISBN 13: 9783659705137
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -In spite of the recent p-type oxide TFTs developments based on SnO and CuO, the results achieved so far refer to devices processed at high temperatures and are limited by a low hole mobility and a low On-Off ratio and still there is no report on p-type oxide TFTs with performance similar to n-type TFTs. Achieving high performance p-type oxide TFTs will definitely promote a new era for electronics in rigid and flexible substrates, away from silicon. None of the few reported p-channel oxide TFTs is suitable for practical applications, which demand significant improvements in the device engineering to meet the real-world electronic requirements, where low processing temperatures together with high mobility and high On-Off ratio are required for TFT and CMOS applications. The present book presents the study and optimization of p-type TFTs based on oxide semiconductors deposited by r.f. magnetron sputtering without intentional substrate heating. In this work several p-type oxide semiconductors were studied and optimized based on undoped SnO, Cu-doped SnO and In-doped SnO.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 204 pp. Englisch. Seller Inventory # 9783659705137
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Development of p-type oxide TFTs based on SnO and its alloys
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LAP LAMBERT Academic Publishing, 2015
ISBN 10: 3659705136
ISBN 13: 9783659705137
New
Taschenbuch
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - In spite of the recent p-type oxide TFTs developments based on SnO and CuO, the results achieved so far refer to devices processed at high temperatures and are limited by a low hole mobility and a low On-Off ratio and still there is no report on p-type oxide TFTs with performance similar to n-type TFTs. Achieving high performance p-type oxide TFTs will definitely promote a new era for electronics in rigid and flexible substrates, away from silicon. None of the few reported p-channel oxide TFTs is suitable for practical applications, which demand significant improvements in the device engineering to meet the real-world electronic requirements, where low processing temperatures together with high mobility and high On-Off ratio are required for TFT and CMOS applications. The present book presents the study and optimization of p-type TFTs based on oxide semiconductors deposited by r.f. magnetron sputtering without intentional substrate heating. In this work several p-type oxide semiconductors were studied and optimized based on undoped SnO, Cu-doped SnO and In-doped SnO. Seller Inventory # 9783659705137