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Role of Annealing on the Interface Engineering in Ge MOS devices: Role of Annealing on the Interface Engineering - Softcover
Synopsis
High permittivity dielectrics and suitable substrates are studies intensively in the view of their use in VLSI design. However, hafnium oxide (HfO2) is a promising candidate for the next generation of gate dielectrics due to its relatively high dielectric constant 25 , wide bandgap, good thermal stability, and relatively high free energy of reaction with the substrate material. Recently, Ge-based electronic devices have regained considerable attention and Ge can provide solutions to major problems that Si technology is facing for advanced CMOS devices; this is mainly due to the higher mo-bility of both the holes and the electrons in Ge substrate. Hence this book is useful for the readers to knew some significant issue on Ge technology for high frequency devices.
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Role of Annealing on the Interface Engineering in Ge MOS devices
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LAP LAMBERT Academic Publishing Jan 2017, 2017
ISBN 10: 3659684856
ISBN 13: 9783659684852
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Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -High permittivity dielectrics and suitable substrates are studies intensively in the view of their use in VLSI design. However, hafnium oxide (HfO2) is a promising candidate for the next generation of gate dielectrics due to its relatively high dielectric constant 25 , wide bandgap, good thermal stability, and relatively high free energy of reaction with the substrate material. Recently, Ge-based electronic devices have regained considerable attention and Ge can provide solutions to major problems that Si technology is facing for advanced CMOS devices; this is mainly due to the higher mo-bility of both the holes and the electrons in Ge substrate. Hence this book is useful for the readers to knew some significant issue on Ge technology for high frequency devices. 76 pp. Englisch. Seller Inventory # 9783659684852
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Role of Annealing on the Interface Engineering in Ge MOS devices: Role of Annealing on the Interface Engineering
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LAP LAMBERT Academic Publishing, 2017
ISBN 10: 3659684856
ISBN 13: 9783659684852
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Paperback. Condition: Brand New. 76 pages. 8.66x5.91x0.18 inches. In Stock. Seller Inventory # 3659684856
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Role of Annealing on the Interface Engineering in Ge MOS devices
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LAP LAMBERT Academic Publishing, 2017
ISBN 10: 3659684856
ISBN 13: 9783659684852
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Softcover
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: T. V. RajeshT.V.Rajesh, Deakin University, Australia. He published two International papers. Dr.S.V.Jagadeesh Chandra, Professor of LBRCE, Mylavaram. He published 1 book and 35 scientific articles in referred journals. Dr. CH.V.V.Ram. Seller Inventory # 159143660
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Role of Annealing on the Interface Engineering in Ge MOS devices
Published by
LAP LAMBERT Academic Publishing Jan 2017, 2017
ISBN 10: 3659684856
ISBN 13: 9783659684852
New
Taschenbuch
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -High permittivity dielectrics and suitable substrates are studies intensively in the view of their use in VLSI design. However, hafnium oxide (HfO2) is a promising candidate for the next generation of gate dielectrics due to its relatively high dielectric constant 25 , wide bandgap, good thermal stability, and relatively high free energy of reaction with the substrate material. Recently, Ge-based electronic devices have regained considerable attention and Ge can provide solutions to major problems that Si technology is facing for advanced CMOS devices; this is mainly due to the higher mo-bility of both the holes and the electrons in Ge substrate. Hence this book is useful for the readers to knew some significant issue on Ge technology for high frequency devices.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 76 pp. Englisch. Seller Inventory # 9783659684852
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Role of Annealing on the Interface Engineering in Ge MOS devices : Role of Annealing on the Interface Engineering
Published by
LAP LAMBERT Academic Publishing, 2017
ISBN 10: 3659684856
ISBN 13: 9783659684852
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Taschenbuch
Seller: AHA-BUCH GmbH, Einbeck, Germany
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - High permittivity dielectrics and suitable substrates are studies intensively in the view of their use in VLSI design. However, hafnium oxide (HfO2) is a promising candidate for the next generation of gate dielectrics due to its relatively high dielectric constant 25 , wide bandgap, good thermal stability, and relatively high free energy of reaction with the substrate material. Recently, Ge-based electronic devices have regained considerable attention and Ge can provide solutions to major problems that Si technology is facing for advanced CMOS devices; this is mainly due to the higher mo-bility of both the holes and the electrons in Ge substrate. Hence this book is useful for the readers to knew some significant issue on Ge technology for high frequency devices. Seller Inventory # 9783659684852
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Role of Annealing on the Interface Engineering in Ge MOS devices | Role of Annealing on the Interface Engineering
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LAP LAMBERT Academic Publishing, 2017
ISBN 10: 3659684856
ISBN 13: 9783659684852
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Seller: preigu, Osnabrück, Germany
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Taschenbuch. Condition: Neu. Role of Annealing on the Interface Engineering in Ge MOS devices | Role of Annealing on the Interface Engineering | Rajesh T. V. (u. a.) | Taschenbuch | 76 S. | Englisch | 2017 | LAP LAMBERT Academic Publishing | EAN 9783659684852 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. Seller Inventory # 108308730