Synopsis
Recently, telecommunication system requires high performance, low noise, low power and high linear RF circuits. Since the digital modulation design requires highly linear front end circuits, the linearity requirement of the LNA becomes more rigorous. Due to possible large interference signal tones at the receiver end along with the carrier, LNA is expected to provide high linearity, thus preventing the intermodulation tones created by the interference signal from corrupting the carrier signal. The research focuses on designing a LNA which achieves high linearity without sacrificing any of its specifications of gain and Noise Figure (NF). The project focused on designing a 5.5 GHz linear LNA using a standard UMC.18um technology. The LNA employed inductive source degeneration topology with on chip passive spiral inductor. Employing the body biasing technique with post distortion scheme not only achieve high linearity, but also minimizes the degradation of gain, noise figure and power consumption. The simulation results show that CMOS tech has the capability to achieve a 5.5 GHz LNA. The LNA draws a 10.8mw power on 1.8V power supply while achieve gain of 11.4dB IIP3 of 9.20dBm
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About the Author
Dr.Fazal A Talukdar obtained his Bachelor of Engineering (Hons) from Regional Engineering College, Silchar (now, NIT Silchar) in 1987. He obtained his MTech in 1993 and PhD in 2002-03 from Indian Institute of Technology Delhi and Jadavpur University respectively.He is a working as professor in ece department nit silchar.
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Design of 5.5 GHz Highly Linear CMOS Low Noise Amplifier
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LAP LAMBERT Academic Publishing Dez 2013, 2013
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ISBN 13: 9783659495939
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Recently, telecommunication system requires high performance, low noise, low power and high linear RF circuits. Since the digital modulation design requires highly linear front end circuits, the linearity requirement of the LNA becomes more rigorous. Due to possible large interference signal tones at the receiver end along with the carrier, LNA is expected to provide high linearity, thus preventing the intermodulation tones created by the interference signal from corrupting the carrier signal. The research focuses on designing a LNA which achieves high linearity without sacrificing any of its specifications of gain and Noise Figure (NF). The project focused on designing a 5.5 GHz linear LNA using a standard UMC.18um technology. The LNA employed inductive source degeneration topology with on chip passive spiral inductor. Employing the body biasing technique with post distortion scheme not only achieve high linearity, but also minimizes the degradation of gain, noise figure and power consumption. The simulation results show that CMOS tech has the capability to achieve a 5.5 GHz LNA. The LNA draws a 10.8mw power on 1.8V power supply while achieve gain of 11.4dB IIP3 of 9.20dBm 76 pp. Englisch. Seller Inventory # 9783659495939
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Design of 5.5 GHz Highly Linear CMOS Low Noise Amplifier
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: A. Talukdar FazalDr.Fazal A Talukdar obtained his Bachelor of Engineering (Hons) from Regional Engineering College, Silchar (now, NIT Silchar) in 1987. He obtained his MTech in 1993 and PhD in 2002-03 from Indian Institute of Technol. Seller Inventory # 5159992
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Design of 5.5 GHz Highly Linear CMOS Low Noise Amplifier
Published by
LAP LAMBERT Academic Publishing Dez 2013, 2013
ISBN 10: 365949593X
ISBN 13: 9783659495939
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Taschenbuch
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Recently, telecommunication system requires high performance, low noise, low power and high linear RF circuits. Since the digital modulation design requires highly linear front end circuits, the linearity requirement of the LNA becomes more rigorous. Due to possible large interference signal tones at the receiver end along with the carrier, LNA is expected to provide high linearity, thus preventing the intermodulation tones created by the interference signal from corrupting the carrier signal. The research focuses on designing a LNA which achieves high linearity without sacrificing any of its specifications of gain and Noise Figure (NF). The project focused on designing a 5.5 GHz linear LNA using a standard UMC.18um technology. The LNA employed inductive source degeneration topology with on chip passive spiral inductor. Employing the body biasing technique with post distortion scheme not only achieve high linearity, but also minimizes the degradation of gain, noise figure and power consumption. The simulation results show that CMOS tech has the capability to achieve a 5.5 GHz LNA. The LNA draws a 10.8mw power on 1.8V power supply while achieve gain of 11.4dB IIP3 of 9.20dBmVDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 76 pp. Englisch. Seller Inventory # 9783659495939
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Design of 5.5 GHz Highly Linear CMOS Low Noise Amplifier
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LAP LAMBERT Academic Publishing, 2013
ISBN 10: 365949593X
ISBN 13: 9783659495939
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Recently, telecommunication system requires high performance, low noise, low power and high linear RF circuits. Since the digital modulation design requires highly linear front end circuits, the linearity requirement of the LNA becomes more rigorous. Due to possible large interference signal tones at the receiver end along with the carrier, LNA is expected to provide high linearity, thus preventing the intermodulation tones created by the interference signal from corrupting the carrier signal. The research focuses on designing a LNA which achieves high linearity without sacrificing any of its specifications of gain and Noise Figure (NF). The project focused on designing a 5.5 GHz linear LNA using a standard UMC.18um technology. The LNA employed inductive source degeneration topology with on chip passive spiral inductor. Employing the body biasing technique with post distortion scheme not only achieve high linearity, but also minimizes the degradation of gain, noise figure and power consumption. The simulation results show that CMOS tech has the capability to achieve a 5.5 GHz LNA. The LNA draws a 10.8mw power on 1.8V power supply while achieve gain of 11.4dB IIP3 of 9.20dBm. Seller Inventory # 9783659495939
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Design of 5.5 GHz Highly Linear CMOS Low Noise Amplifier
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LAP LAMBERT Academic Publishing, 2013
ISBN 10: 365949593X
ISBN 13: 9783659495939
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Taschenbuch. Condition: Neu. Design of 5.5 GHz Highly Linear CMOS Low Noise Amplifier | Fazal A. Talukdar (u. a.) | Taschenbuch | 76 S. | Englisch | 2013 | LAP LAMBERT Academic Publishing | EAN 9783659495939 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. Seller Inventory # 105540414
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Design of 5.5 GHz Highly Linear CMOS Low Noise Amplifier
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