Energy-Performance Characterization of CMOS/MTJ Hybrid Circuits: Can Magnetic Tunnel Junction (MTJ) help CMOS technology become ultra-low power? - Softcover
Synopsis
The explosive growth of the semiconductor industry has been driven by the rapid scaling of CMOS technology. Yet, as scaling getting closer to the physical limit, the increasing device leakage and viability greatly deteriorate the energy efficiency and stability of CMOS circuits. In order to extend the scaling and alleviate the leakage problem, various emerging electrical switches have been suggested in the ITRS roadmap. However, CMOS technology will continue to advance and lead the semiconductor industry regardless. Thus, in short term, people will keep looking for new switches that are CMOS-compatible and can supplement CMOS for ultra-low-power operations. Magnetic Tunnel Junction (MTJ) is a great candidate for these goals, as its non-volatility and CMOS-compatibility allows for realizing CMOS/MTJ hybrid circuits, where the operation states can be stored in MTJ cells in a distributed fashion and fine-grain power gating can be realized to eliminate the standby power. In this book, we discuss how such hybrid logic circuits can be realized. We also characterize their energy and performance improvements over conventional CMOS designs in both circuit and architecture level benchmarks.
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About the Author
Dr. Ren received the B.Eng. degree from Zhejiang University and the M.S. and Ph.D degrees from UCLA in 2008, 2010 and 2013, respectively, all in EE. His current research interests include circuit design and design optimization for STT-RAM and efficient DSP architectures for the sparse signal processing in compressive sensing applications.
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Energy-Performance Characterization of CMOS/MTJ Hybrid Circuits
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LAP LAMBERT Academic Publishing Nov 2012, 2012
ISBN 10: 3659298913
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The explosive growth of the semiconductor industry has been driven by the rapid scaling of CMOS technology. Yet, as scaling getting closer to the physical limit, the increasing device leakage and viability greatly deteriorate the energy efficiency and stability of CMOS circuits. In order to extend the scaling and alleviate the leakage problem, various emerging electrical switches have been suggested in the ITRS roadmap. However, CMOS technology will continue to advance and lead the semiconductor industry regardless. Thus, in short term, people will keep looking for new switches that are CMOS-compatible and can supplement CMOS for ultra-low-power operations. Magnetic Tunnel Junction (MTJ) is a great candidate for these goals, as its non-volatility and CMOS-compatibility allows for realizing CMOS/MTJ hybrid circuits, where the operation states can be stored in MTJ cells in a distributed fashion and fine-grain power gating can be realized to eliminate the standby power. In this book, we discuss how such hybrid logic circuits can be realized. We also characterize their energy and performance improvements over conventional CMOS designs in both circuit and architecture level benchmarks. 76 pp. Englisch. Seller Inventory # 9783659298912
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Energy-Performance Characterization of CMOS/MTJ Hybrid Circuits
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Ren FengboDr. Ren received the B.Eng. degree from Zhejiang University and the M.S. and Ph.D degrees from UCLA in 2008, 2010 and 2013, respectively, all in EE. His current research interests include circuit design and design optimizat. Seller Inventory # 5146718
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Energy-Performance Characterization of CMOS/MTJ Hybrid Circuits
Published by
LAP LAMBERT Academic Publishing Nov 2012, 2012
ISBN 10: 3659298913
ISBN 13: 9783659298912
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The explosive growth of the semiconductor industry has been driven by the rapid scaling of CMOS technology. Yet, as scaling getting closer to the physical limit, the increasing device leakage and viability greatly deteriorate the energy efficiency and stability of CMOS circuits. In order to extend the scaling and alleviate the leakage problem, various emerging electrical switches have been suggested in the ITRS roadmap. However, CMOS technology will continue to advance and lead the semiconductor industry regardless. Thus, in short term, people will keep looking for new switches that are CMOS-compatible and can supplement CMOS for ultra-low-power operations. Magnetic Tunnel Junction (MTJ) is a great candidate for these goals, as its non-volatility and CMOS-compatibility allows for realizing CMOS/MTJ hybrid circuits, where the operation states can be stored in MTJ cells in a distributed fashion and fine-grain power gating can be realized to eliminate the standby power. In this book, we discuss how such hybrid logic circuits can be realized. We also characterize their energy and performance improvements over conventional CMOS designs in both circuit and architecture level benchmarks.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 76 pp. Englisch. Seller Inventory # 9783659298912
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Energy-Performance Characterization of CMOS/MTJ Hybrid Circuits : Can Magnetic Tunnel Junction (MTJ) help CMOS technology become ultra-low power?
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LAP LAMBERT Academic Publishing, 2012
ISBN 10: 3659298913
ISBN 13: 9783659298912
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The explosive growth of the semiconductor industry has been driven by the rapid scaling of CMOS technology. Yet, as scaling getting closer to the physical limit, the increasing device leakage and viability greatly deteriorate the energy efficiency and stability of CMOS circuits. In order to extend the scaling and alleviate the leakage problem, various emerging electrical switches have been suggested in the ITRS roadmap. However, CMOS technology will continue to advance and lead the semiconductor industry regardless. Thus, in short term, people will keep looking for new switches that are CMOS-compatible and can supplement CMOS for ultra-low-power operations. Magnetic Tunnel Junction (MTJ) is a great candidate for these goals, as its non-volatility and CMOS-compatibility allows for realizing CMOS/MTJ hybrid circuits, where the operation states can be stored in MTJ cells in a distributed fashion and fine-grain power gating can be realized to eliminate the standby power. In this book, we discuss how such hybrid logic circuits can be realized. We also characterize their energy and performance improvements over conventional CMOS designs in both circuit and architecture level benchmarks. Seller Inventory # 9783659298912
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Energy-Performance Characterization of CMOS/MTJ Hybrid Circuits | Can Magnetic Tunnel Junction (MTJ) help CMOS technology become ultra-low power?
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ISBN 13: 9783659298912
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Taschenbuch. Condition: Neu. Energy-Performance Characterization of CMOS/MTJ Hybrid Circuits | Can Magnetic Tunnel Junction (MTJ) help CMOS technology become ultra-low power? | Fengbo Ren | Taschenbuch | 76 S. | Englisch | 2012 | LAP LAMBERT Academic Publishing | EAN 9783659298912 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. Seller Inventory # 106171008
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Energy-Performance Characterization of CMOS/MTJ Hybrid Circuits: Can Magnetic Tunnel Junction (MTJ) help CMOS technology become ultra-low power
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ISBN 13: 9783659298912
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