Synopsis
1. Introduction.- 2. Lattice Distortion and the Jahn-Teller Effect.- 2.1 The Electron-Phonon Interaction.- 2.1.1 The Born-Oppenheimer and Related Adiabatic Approximations.- 2.1.2 Electron-Lattice Coupling.- 2.1.3 Occupancy Levels and One-Electron Eigenvalues.- 2.2 Symmetry Considerations: The Stable Atomic Configurations.- 2.2.1 General Reduction of the Jahn-Teller Matrices in Td Symmetry.- 2.2.2 The Stable Distortions.- a) The Nondegenerate A1 (or A2) Level.- b) The Twofold Degenerate Level E.- c) The Triply Degenerate State T Coupled to E Modes.- d) The Triply Degenerate State Coupled to E and T Modes.- 2.2.3 The Case of Near Degeneracy.- 2.3 Coupled Electronic and Nuclear Motion: Vibronic States - Static and Dynamic Jahn-Teller Limits.- 2.3.1 The E State Coupled to E Modes (Case of Cylindrical Symmetry).- 2.3.2 Static and Dynamic Jahn-Teller Effects.- a) The Static Limit.- b) The Dynamic Limit.- 2.3.3 The Ham Effect.- 2.3.4 Extension to More Complex Cases.- a) T2 Level with T2 Modes.- b) E Level with E Modes.- 2.3.5 Transitions from Static to Dynamic Situations.- 2.4 The Vacancy in Silicon.- 2.4.1 Static Distortions Near the Vacancy.- 2.4.2 The Relative Importance of the Many-Electron Effects and the Jahn-Teller Effect.- 2.4.3 Effective Force Constants Near the Vacancy.- 2.4.4 The Negative U Center Formed by V++, V+, V0, in Silicon.- 3. Electron Paramagnetic Resonance.- 3.1 The Hamiltonian.- 3.2 Electronic Zeeman Interaction.- 3.2.1 Zeeman Interaction.- 3.2.2 Spin Resonance.- 3.2.3 Observation of Resonance.- 3.3 Spin Orbit Coubling.- 3.3.1 Quenching of Orbital Motion.- 3.3.2 Effective Spin Hamiltonian.- 3.3.3 Quantitative Treatment of the g Tensor.- 3.3.4 Analysis of the g Tensor.- 3.4 Hyperfine Interaction.- 3.5 Nuclear Zeeman Interaction - Double Resonance.- 3.6 Spin-Spin Interaction. Fine Structure.- 3.7 EPR of Impurities and Vacancy - Impurity Pairs in Silicon.- 3.7.1 Evaluation of the g Shift.- 3.7.2 The Hyperfine Tensor.- 3.7.3 Experimental Results.- 3.8 The Vacancy in Silicon.- 3.8.1 EPR Spectrum for V+.- 3.8.2 Microscopic Model for V+.- 3.8.3 Charge States of the Vacancy.- 3.8.4 Jahn-Teller Distortion.- 3.8.5 Energy Levels.- 4. Optical Properties.- 4.1 Transition Probability.- 4.2 The Configuration Coordinate Diagram.- 4.3 Optical Line Shape and the Electron-Lattice Interaction.- 4.3.1 Coupling to One Lattice Coordinate at T = 0 K.- 4.3.2 Overlap Between Harmonic Oscillators.- 4.3.3 The Low-Temperature Limit.- 4.3.4 The Strong Coupling Limit.- 4.3.5 Classical Treatment for the Lattice.- 4.3.6 Coupling to a Continuum of Lattice Modes.- 4.3.7 Moments of the Line-Shape Function.- 4.4 Optical Cross Section.- 4.4.1 Theoretical Models.- 4.4.2 Exact Expression for the Case of a Delta-Function Potential.- 4.4.3 Measurement.- 4.5 An Example. The GR Absorption Band in Diamond.- 4.5.1 Experimental Situation.- 4.5.2 Theoretical Interpretation.- 5. Electrical Properties.- 5.1 Carrier Distribution Between Bands and Defect Levels.- 5.1.1 Intrinsic Semiconductor.- 5.1.2 Extrinsic Semiconductor.- 5.1.3 The Degeneracy Factor.- 5.1.4 Experimental Determination of Defect Concentration.- 5.2 Conduction in Case of Defect Interaction.- 5.2.1 Metallic Conduction.- 5.2.2 Hopping Conduction.- a) Jump Probability.- b) Hopping Conductivity.- 5.2.3 Observation of Hopping Conductivity.- 5.3 Carrier Scattering.- 5.3.1 Scattering Cross Section.- 5.3.2 Mobility.- a) Scattering by a Charged Center.- b) Scattering by Pairs.- c) Scattering by Neutral Defects.- 5.3.3 Experimental Results.- 6. Carrier Emission and Recombination.- 6.1 Emission and Capture Rates.- 6.1.1 The Principle of Detailed Balance.- 6.1.2 Enthalpy and Entropy of Ionization.- 6.1.3 Trapping and Recombination Centers.- 6.2 Experimental Observation of Emission Rates.- 6.2.1 Principle.- 6.2.2 Observation Techniques.- 6.2.3 Emission from Minority and Majority Carrier Traps.- 6.2.4 Capture and Reemission from Majority Carrier Traps.- 6.2.5 Exact Theory.- 6.2.6 Deep Level Transient Spectro
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