Optical Absorption of Impurities and Defects in Semiconducting Crystals: Electronic Absorption of Deep Centres and Vibrational Spectra: 169 (Springer Series in Solid-State Sciences, 169) - Softcover
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Synopsis
This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.
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About the Author
Dr. Bernard Pajot has been "Directeur de Recherches au Centre National de la Recherche Scientifique (CNRS)" since 1985.
Prof. Bernard Clerjaud is Full Professor at the “Université Pierre et Marie Curie” and has been at the “Institut des NanoSciences de Paris” since 1985.
From the Back Cover
This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.
"About this title" may belong to another edition of this title.
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Optical Absorption of Impurities and Defects in Semiconducting Crystals: Electronic Absorption of Deep Centres and Vibrational Spectra (Springer Series in Solid-State Sciences, 169)
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials. 540 pp. Englisch. Seller Inventory # 9783642430800
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Optical Absorption of Impurities and Defects in Semiconducting Crystals: Electronic Absorption of Deep Centres and Vibrational Spectra (eng)
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Reviews optical absorption of impurities and defects in semiconductorsEstablishes a correlation between electronic, vibrational spectroscopy and electron spin resonanceDisplays numerous spectroscopic data on isotope effects in quasimonoisot. Seller Inventory # 5060576
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Taschenbuch. Condition: Neu. Optical Absorption of Impurities and Defects in Semiconducting Crystals | Electronic Absorption of Deep Centres and Vibrational Spectra | Bernard Pajot (u. a.) | Taschenbuch | Springer Series in Solid-State Sciences | xxviii | Englisch | 2014 | Springer | EAN 9783642430800 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. Seller Inventory # 105100090
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Optical Absorption of Impurities and Defects in Semiconducting Crystals
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 540 pp. Englisch. Seller Inventory # 9783642430800