Items related to Probing the kinetics of Ga/Si interfaces
Synopsis
This book contains the discussion and experimental results on the kinetics of the sub-monolayer adsorption & desorption of Ga adatoms on different silicon surfaces under ultra high vacuum condition. Different aspects of surface science as well as related characterization techniques to probe Ga/Si interface are discussed. Several Ga induced superstructural phases were observed during adsorption and desorption of Ga from Si(111)-7x7 and Si(110)-16x2 reconstructed surfaces. We have discussed and proposed models for the growth and also fr several superstructural phases formed by Ga adatoms on clean reconstructed silicon surfaces. Complete 2D Phase diagrams for different interfacial systems have also been discussed by combining different AES/LEED experiments all together. These modified Ga induced different superstructural phases formed on Si(111) can be used as a template for high quality and low defect III-Nitrides growth on Si surfaces.
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About the Author
Author's vita: Dr. Praveen Kumar, INSPIRE Faculty, CSIR-CSIO, Chandigarh, India. Ms. Pooja Devi, Scientist, CSIR-CSIO, Chandigarh, India. Dr. Mahesh Kumar, Scientist, CSIR-NPL, Delhi, India. Prof. S. M. Shivaprasad, ICMS, JNCASR, Bangalore, India.
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Probing the kinetics of Ga/Si interfaces
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Scholars' Press Apr 2016, 2016
ISBN 10: 3639863437
ISBN 13: 9783639863437
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book contains the discussion and experimental results on the kinetics of the sub-monolayer adsorption & desorption of Ga adatoms on different silicon surfaces under ultra high vacuum condition. Different aspects of surface science as well as related characterization techniques to probe Ga/Si interface are discussed. Several Ga induced superstructural phases were observed during adsorption and desorption of Ga from Si(111)-7x7 and Si(110)-16x2 reconstructed surfaces. We have discussed and proposed models for the growth and also fr several superstructural phases formed by Ga adatoms on clean reconstructed silicon surfaces. Complete 2D Phase diagrams for different interfacial systems have also been discussed by combining different AES/LEED experiments all together. These modified Ga induced different superstructural phases formed on Si(111) can be used as a template for high quality and low defect III-Nitrides growth on Si surfaces. 108 pp. Englisch. Seller Inventory # 9783639863437
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Probing the kinetics of Ga/Si interfaces
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Probing the kinetics of Ga/Si interfaces
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Kumar PraveenAuthor s vita: Dr. Praveen Kumar, INSPIRE Faculty, CSIR-CSIO, Chandigarh, India. Ms. Pooja Devi, Scientist, CSIR-CSIO, Chandigarh, India. Dr. Mahesh Kumar, Scientist, CSIR-NPL, Delhi, India. . Seller Inventory # 151404939
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Probing the kinetics of Ga/Si interfaces
Published by
Scholars' Press Apr 2016, 2016
ISBN 10: 3639863437
ISBN 13: 9783639863437
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Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book contains the discussion and experimental results on the kinetics of the sub-monolayer adsorption & desorption of Ga adatoms on different silicon surfaces under ultra high vacuum condition. Different aspects of surface science as well as related characterization techniques to probe Ga/Si interface are discussed. Several Ga induced superstructural phases were observed during adsorption and desorption of Ga from Si(111)-7x7 and Si(110)-16x2 reconstructed surfaces. We have discussed and proposed models for the growth and also fr several superstructural phases formed by Ga adatoms on clean reconstructed silicon surfaces. Complete 2D Phase diagrams for different interfacial systems have also been discussed by combining different AES/LEED experiments all together. These modified Ga induced different superstructural phases formed on Si(111) can be used as a template for high quality and low defect III-Nitrides growth on Si surfaces.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 108 pp. Englisch. Seller Inventory # 9783639863437
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Probing the kinetics of Ga/Si interfaces
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Taschenbuch. Condition: Neu. Probing the kinetics of Ga/Si interfaces | Praveen Kumar (u. a.) | Taschenbuch | 108 S. | Englisch | 2016 | Scholars' Press | EAN 9783639863437 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. Seller Inventory # 103782565
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Probing the kinetics of Ga/Si interfaces
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book contains the discussion and experimental results on the kinetics of the sub-monolayer adsorption & desorption of Ga adatoms on different silicon surfaces under ultra high vacuum condition. Different aspects of surface science as well as related characterization techniques to probe Ga/Si interface are discussed. Several Ga induced superstructural phases were observed during adsorption and desorption of Ga from Si(111)-7x7 and Si(110)-16x2 reconstructed surfaces. We have discussed and proposed models for the growth and also fr several superstructural phases formed by Ga adatoms on clean reconstructed silicon surfaces. Complete 2D Phase diagrams for different interfacial systems have also been discussed by combining different AES/LEED experiments all together. These modified Ga induced different superstructural phases formed on Si(111) can be used as a template for high quality and low defect III-Nitrides growth on Si surfaces. Seller Inventory # 9783639863437
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Probing the kinetics of Ga/Si interfaces
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