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Defects Spectroscopy in Silicon Diodes: Deep-level traps in semiconductors physics: from ultra-fast recovery to radiation-induced damage - Softcover
Synopsis
This book focuses on two aspects of deep-level traps in semiconductor devices: on one hand the platinum impurities are studied as example of defects diffused purposefully in pin power ultra-fast diodes in order to increase their recovery performance; on the other hand, the ionizing radiation-induced defects are considered. In this case, some academic samples are studied before and after irradiation with a 3 MeV proton beam. The devices are studied by means of IV, CV, CVT and DLTS techniques. This study deals with the characterization and dynamics of the defects, starting from the realization ab initio of new defects-spectroscopy setups. It is a research performed within the "IAEA Coordinated Project on Utilization of Ion Accelerators for Studying and Modelling Ion Induced Radiation Defects in Semiconductors and Insulators" (2012-2015).
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About the Author
I received the M.Sc. degree in Condensed matter Physics at the University of Torino focusing on Semiconductor Physics and radiation-induced damage on electronics devices. Currently I am continuing my research as doctoral student at ETH Zurich. My current topics are magnetism in strongly-correlated systems and the study of complexity.
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Defects Spectroscopy in Silicon Diodes
Published by
Edizioni Accademiche Italiane Nov 2015, 2015
ISBN 10: 3639773047
ISBN 13: 9783639773040
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Taschenbuch
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book focuses on two aspects of deep-level traps in semiconductor devices: on one hand the platinum impurities are studied as example of defects diffused purposefully in pin power ultra-fast diodes in order to increase their recovery performance; on the other hand, the ionizing radiation-induced defects are considered. In this case, some academic samples are studied before and after irradiation with a 3 MeV proton beam. The devices are studied by means of IV, CV, CVT and DLTS techniques. This study deals with the characterization and dynamics of the defects, starting from the realization ab initio of new defects-spectroscopy setups. It is a research performed within the 'IAEA Coordinated Project on Utilization of Ion Accelerators for Studying and Modelling Ion Induced Radiation Defects in Semiconductors and Insulators' (2012-2015). 244 pp. Englisch. Seller Inventory # 9783639773040
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Defects Spectroscopy in Silicon Diodes
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Edizioni Accademiche Italiane, 2015
ISBN 10: 3639773047
ISBN 13: 9783639773040
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Defects Spectroscopy in Silicon Diodes | Deep-level traps in semiconductors physics: from ultra-fast recovery to radiation-induced damage
Published by
Edizioni Accademiche Italiane, 2015
ISBN 10: 3639773047
ISBN 13: 9783639773040
New
Taschenbuch
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Taschenbuch. Condition: Neu. Defects Spectroscopy in Silicon Diodes | Deep-level traps in semiconductors physics: from ultra-fast recovery to radiation-induced damage | Nicolò Barbero | Taschenbuch | 244 S. | Englisch | 2015 | Edizioni Accademiche Italiane | EAN 9783639773040 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. Seller Inventory # 104092429
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Defects Spectroscopy in Silicon Diodes
Published by
Edizioni Accademiche Italiane Nov 2015, 2015
ISBN 10: 3639773047
ISBN 13: 9783639773040
New
Taschenbuch
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book focuses on two aspects of deep-level traps in semiconductor devices: on one hand the platinum impurities are studied as example of defects diffused purposefully in pin power ultra-fast diodes in order to increase their recovery performance; on the other hand, the ionizing radiation-induced defects are considered. In this case, some academic samples are studied before and after irradiation with a 3 MeV proton beam. The devices are studied by means of IV, CV, CVT and DLTS techniques. This study deals with the characterization and dynamics of the defects, starting from the realization ab initio of new defects-spectroscopy setups. It is a research performed within the 'IAEA Coordinated Project on Utilization of Ion Accelerators for Studying and Modelling Ion Induced Radiation Defects in Semiconductors and Insulators' (2012-2015).VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 244 pp. Englisch. Seller Inventory # 9783639773040
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Defects Spectroscopy in Silicon Diodes : Deep-level traps in semiconductors physics: from ultra-fast recovery to radiation-induced damage
Published by
Edizioni Accademiche Italiane, 2015
ISBN 10: 3639773047
ISBN 13: 9783639773040
New
Taschenbuch
Seller: AHA-BUCH GmbH, Einbeck, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book focuses on two aspects of deep-level traps in semiconductor devices: on one hand the platinum impurities are studied as example of defects diffused purposefully in pin power ultra-fast diodes in order to increase their recovery performance; on the other hand, the ionizing radiation-induced defects are considered. In this case, some academic samples are studied before and after irradiation with a 3 MeV proton beam. The devices are studied by means of IV, CV, CVT and DLTS techniques. This study deals with the characterization and dynamics of the defects, starting from the realization ab initio of new defects-spectroscopy setups. It is a research performed within the 'IAEA Coordinated Project on Utilization of Ion Accelerators for Studying and Modelling Ion Induced Radiation Defects in Semiconductors and Insulators' (2012-2015). Seller Inventory # 9783639773040