Synopsis
Rupendra Kumar Sharma received Ph.D. degree in electronics from the University of Delhi, India in 2010. His Ph.D thesis was on the modeling, simulation and characterization of gate misalignment effect in DG MOSFETs. Dr. Sharma was a Postdoctoral Researcher with the Department of Electronics (DEIS) University of Bologna, Italy, where he was involved in numerical optimization and characterization of a dual N/P channel super-junction LDMOS for low dropout voltage regulator (LDO) applications. He has also served as a Marie-Curie experienced researcher for the Telecommunication Systems Institute; Technical University of Crete, Greece on a European Funding Research Program Compact Modeling Network ("COMON") on compact modeling of nanoscale multi-gate MOSFETs and of high-voltage MOSFETs. Currently, He is working on the project "Silicon carbide based power devices and their applications for power savings" funded by European Social Fund in collaboration with Czech Science Foundation at the Faculty of Electrical Engineering, Czech Technical University in Prague. He has authored or coauthored over 32 papers in various international journals and conference proceedings.
"synopsis" may belong to another edition of this title.
Search results for Modeling and Simulation of Gate Mislaignment Effect...
Seller Image
Modeling and Simulation of Gate Mislaignment Effect in MOSFETs
Print on DemandSeller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Rupendra Kumar Sharma received Ph.D. degree in electronics from the University of Delhi, India in 2010. His Ph.D thesis was on the modeling, simulation and characterization of gate misalignment effect in DG MOSFETs. Dr. Sharma was a Postdoctoral Researcher with the Department of Electronics (DEIS) University of Bologna, Italy, where he was involved in numerical optimization and characterization of a dual N/P channel super-junction LDMOS for low dropout voltage regulator (LDO) applications. He has also served as a Marie-Curie experienced researcher for the Telecommunication Systems Institute; Technical University of Crete, Greece on a European Funding Research Program Compact Modeling Network ('COMON') on compact modeling of nanoscale multi-gate MOSFETs and of high-voltage MOSFETs. Currently, He is working on the project 'Silicon carbide based power devices and their applications for power savings' funded by European Social Fund in collaboration with Czech Science Foundation at the Faculty of Electrical Engineering, Czech Technical University in Prague. He has authored or coauthored over 32 papers in various international journals and conference proceedings. 156 pp. Englisch. Seller Inventory # 9783639708028
Seller Image
Modeling and Simulation of Gate Mislaignment Effect in MOSFETs
Print on DemandSeller: moluna, Greven, Germany
Seller rating 4 out of 5 stars
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Sharma Rupendra KumarRupendra Kumar Sharma received Ph.D. degree in electronics from Delhi University, India in 2010. His research interest includes modeling, simulation, and characterization of nano-scale multi-gate MOSFETs and of . Seller Inventory # 151397932
Buy New
£ 49.24
£ 42.48 shipping
Ships from Germany to U.S.A.
Ships from Germany to U.S.A.
Quantity: Over 20 available
Stock Image
Modeling and Simulation of Gate Mislaignment Effect in MOSFETs
Seller: Books Puddle, New York, NY, U.S.A.
Seller rating 4 out of 5 stars
Condition: New. Seller Inventory # 26405854747
Stock Image
Modeling and Simulation of Gate Mislaignment Effect in MOSFETs
Print on DemandSeller: Majestic Books, Hounslow, United Kingdom
Seller rating 4 out of 5 stars
Condition: New. Print on Demand. Seller Inventory # 407332292
Buy New
£ 91.32
£ 6.50 shipping
Ships from United Kingdom to U.S.A.
Ships from United Kingdom to U.S.A.
Quantity: 4 available
Stock Image
Modeling and Simulation of Gate Mislaignment Effect in MOSFETs
Print on DemandSeller: Biblios, Frankfurt am main, HESSE, Germany
Seller rating 4 out of 5 stars
Condition: New. PRINT ON DEMAND. Seller Inventory # 18405854737
Seller Image
Modeling and Simulation of Gate Mislaignment Effect in MOSFETs
Seller: preigu, Osnabrück, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. Modeling and Simulation of Gate Mislaignment Effect in MOSFETs | Rupendra Kumar Sharma | Taschenbuch | 156 S. | Englisch | 2015 | Scholars' Press | EAN 9783639708028 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. Seller Inventory # 104360048
Seller Image
Modeling and Simulation of Gate Mislaignment Effect in MOSFETs
Published by
Scholars' Press Jul 2015, 2015
ISBN 10: 3639708024
ISBN 13: 9783639708028
New
Taschenbuch
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Rupendra Kumar Sharma received Ph.D. degree in electronics from the University of Delhi, India in 2010. His Ph.D thesis was on the modeling, simulation and characterization of gate misalignment effect in DG MOSFETs. Dr. Sharma was a Postdoctoral Researcher with the Department of Electronics (DEIS) University of Bologna, Italy, where he was involved in numerical optimization and characterization of a dual N/P channel super-junction LDMOS for low dropout voltage regulator (LDO) applications. He has also served as a Marie-Curie experienced researcher for the Telecommunication Systems Institute; Technical University of Crete, Greece on a European Funding Research Program Compact Modeling Network (¿COMON¿) on compact modeling of nanoscale multi-gate MOSFETs and of high-voltage MOSFETs. Currently, He is working on the project ¿Silicon carbide based power devices and their applications for power savings¿ funded by European Social Fund in collaboration with Czech Science Foundation at the Faculty of Electrical Engineering, Czech Technical University in Prague. He has authored or coauthored over 32 papers in various international journals and conference proceedings.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 156 pp. Englisch. Seller Inventory # 9783639708028
Seller Image
Modeling and Simulation of Gate Mislaignment Effect in MOSFETs
Print on DemandSeller: AHA-BUCH GmbH, Einbeck, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Rupendra Kumar Sharma received Ph.D. degree in electronics from the University of Delhi, India in 2010. His Ph.D thesis was on the modeling, simulation and characterization of gate misalignment effect in DG MOSFETs. Dr. Sharma was a Postdoctoral Researcher with the Department of Electronics (DEIS) University of Bologna, Italy, where he was involved in numerical optimization and characterization of a dual N/P channel super-junction LDMOS for low dropout voltage regulator (LDO) applications. He has also served as a Marie-Curie experienced researcher for the Telecommunication Systems Institute; Technical University of Crete, Greece on a European Funding Research Program Compact Modeling Network ('COMON') on compact modeling of nanoscale multi-gate MOSFETs and of high-voltage MOSFETs. Currently, He is working on the project 'Silicon carbide based power devices and their applications for power savings' funded by European Social Fund in collaboration with Czech Science Foundation at the Faculty of Electrical Engineering, Czech Technical University in Prague. He has authored or coauthored over 32 papers in various international journals and conference proceedings. Seller Inventory # 9783639708028
Stock Image
Modeling and Simulation of Gate Mislaignment Effect in MOSFETs
Seller: Mispah books, Redhill, SURRE, United Kingdom
Seller rating 4 out of 5 stars
paperback. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book. Seller Inventory # ERICA82336397080246
Buy Used
£ 122
£ 25 shipping
Ships from United Kingdom to U.S.A.
Ships from United Kingdom to U.S.A.
Quantity: 1 available