Items related to Plasma Charging Damage
Synopsis
In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in pattern transfer and in thin film deposition is a critical enabling advance among other things. In state of the art silicon Ie manufacturing process, plasma is used in more than 20 different critical steps. Plasma is sometimes called the fourth state of matter (other than gas, liquid and solid). It is a mixture of ions (positive and negative), electrons and neutrals in a quasi-neutral gaseous steady state very far from equilibrium, sustained by an energy source that balances the loss of charged particles. It is a very harsh environment for the delicate ICs. Highly energetic particles such as ions, electrons and photons bombard the surface of the wafer continuously. These bombardments can cause all kinds of damage to the silicon devices that make up the integrated circuits.
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Synopsis
This book provides an in-depth, comprehensive and up-to-date coverage of the subject of plasma charging damage in modern VLSI circuit manufacturing. It is written for beginners as well as practitioners. For beginners, this book presents an easy-to-follow, unified explanation of various charging-damage phenomena, the goal being to provide them with a solid foundation for taking on real damage problems encountered in VLSI manufacturing. For practitioners, it can help bridge the gap between disciplines by providing all of the necessary background materials in one place. Drawing on the author's wide range of experience in plasma science, processing technologies, device physics and reliability physics, the text includes information on: plasma and mechanisms of plasma damage; wear-out and breakdown of thin gate-oxides; the impact of processing equipment on damage; methods of damage measurement; damage management; gate-oxide scaling.
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Plasma Charging Damage
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Gebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The only book of its kind - the only competition on subject matter comes from a Japanese language text to which this author is also a contributorIt is neither as coherent nor as comprehensive as the current textThe books readership runs the whole ga. Seller Inventory # 4289382
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Plasma Charging Damage
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Plasma Charging Damage
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Springer London Okt 2000, 2000
ISBN 10: 1852331445
ISBN 13: 9781852331443
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Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
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Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in pattern transfer and in thin film deposition is a critical enabling advance among other things. In state of the art silicon Ie manufacturing process, plasma is used in more than 20 different critical steps. Plasma is sometimes called the fourth state of matter (other than gas, liquid and solid). It is a mixture of ions (positive and negative), electrons and neutrals in a quasi-neutral gaseous steady state very far from equilibrium, sustained by an energy source that balances the loss of charged particles. It is a very harsh environment for the delicate ICs. Highly energetic particles such as ions, electrons and photons bombard the surface of the wafer continuously. These bombardments can cause all kinds of damage to the silicon devices that make up the integrated circuits. 364 pp. Englisch. Seller Inventory # 9781852331443
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Plasma Charging Damage
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Plasma Charging Damage
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Buch. Condition: Neu. Plasma Charging Damage | Kin P. Cheung | Buch | xii | Englisch | 2000 | Springer | EAN 9781852331443 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand. Seller Inventory # 105614728
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Plasma Charging Damage
Published by
Springer London, Springer Okt 2000, 2000
ISBN 10: 1852331445
ISBN 13: 9781852331443
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Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
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Buch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in pattern transfer and in thin film deposition is a critical enabling advance among other things. In state of the art silicon Ie manufacturing process, plasma is used in more than 20 different critical steps. Plasma is sometimes called the fourth state of matter (other than gas, liquid and solid). It is a mixture of ions (positive and negative), electrons and neutrals in a quasi-neutral gaseous steady state very far from equilibrium, sustained by an energy source that balances the loss of charged particles. It is a very harsh environment for the delicate ICs. Highly energetic particles such as ions, electrons and photons bombard the surface of the wafer continuously. These bombardments can cause all kinds of damage to the silicon devices that make up the integrated circuits.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 364 pp. Englisch. Seller Inventory # 9781852331443
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Plasma Charging Damage
Seller: Books Puddle, New York, NY, U.S.A.
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Condition: New. pp. 364. Seller Inventory # 26323469
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Plasma Charging Damage
Published by
Springer London, Springer London, 2000
ISBN 10: 1852331445
ISBN 13: 9781852331443
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Hardcover
Seller: AHA-BUCH GmbH, Einbeck, Germany
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Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in pattern transfer and in thin film deposition is a critical enabling advance among other things. In state of the art silicon Ie manufacturing process, plasma is used in more than 20 different critical steps. Plasma is sometimes called the fourth state of matter (other than gas, liquid and solid). It is a mixture of ions (positive and negative), electrons and neutrals in a quasi-neutral gaseous steady state very far from equilibrium, sustained by an energy source that balances the loss of charged particles. It is a very harsh environment for the delicate ICs. Highly energetic particles such as ions, electrons and photons bombard the surface of the wafer continuously. These bombardments can cause all kinds of damage to the silicon devices that make up the integrated circuits. Seller Inventory # 9781852331443
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Plasma Charging Damage
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Condition: New. Print on Demand pp. 364 Illus. Seller Inventory # 7557202
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Plasma Charging Damage
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Condition: New. PRINT ON DEMAND pp. 364. Seller Inventory # 18323463