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Synopsis
Comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with surface or interfaces is formulated in this book. A set of generalized equations that describe diffusion of impurity atoms and point defects has the form suitable for numerical solution. Based on this theory, partial diffusion models are constructed, and simulation of many doping processes used in microelectronics is carried out.
A useful tool for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics, this book gives a deep understanding of the physics of diffusion and demonstrates practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
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Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals
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Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals
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COUPLED DIFFUSION OF IMPURITY ATOMS AND POINT DEFECTS IN SILICON CRYSTALS
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COUPLED DIFFUSION OF IMPURITY ATOMS AND POINT DEFECTS IN SILICON CRYSTALS
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Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals
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COUPLED DIFFUSION OF IMPURITY ATOMS AND POINT DEFECTS IN SILICON CRYSTALS
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Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals
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