Contributing Authors. Preface. Foreword. 1: Introduction. 1. Compact modeling. 2. Semiconductor memories. 3. Floating gate devices. 4. First commercial devices and products. 5. Evolution. 6. Applications and market considerations. References. 2: Principles of floating gate devices. 1. Technology highlights. 2. Cell operation. 3. Disturbs and reliability. References. 3: DC conditions: read. 1. Traditional FG device models. 2. The charge balance model. 3. Simulation results. References. 4: Transient conditions: program and erase. 1. Models proposed in the literature. 2. The charge balance model: the extension transient conditions. 3. Fowler-Nordheim current. 4. Channel hot electron current. References. 5: Further possibilities of FG device compact models. 1. Reliability prediction. 2. Statistics. References. 6: Non volatile memory devices. 1. Basic elements. 2. Main building blocks of the device. 3. Matrix and decoders. 4. Operating modes. 5. DMA test. Acknowledgement. References. Acknowledgements.
"synopsis" may belong to another edition of this title.
(No Available Copies)
Search Books: Create a WantCan't find the book you're looking for? We'll keep searching for you. If one of our booksellers adds it to AbeBooks, we'll let you know!
Create a Want