Advanced High Voltage Power Device Concepts - Hardcover

Baliga, B. Jayant

Hardcover

ISBN 10: 1461402689 ISBN 13: 9781461402688

Publisher: Springer, 2011

Synopsis

The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.

About this title

About the Author

B. Jayant Baliga received his M.S. and Ph.D. in electrical engineering from Rensselaer Polytechnic Institute, Troy, NY, in 1971 and 1974, respectively. He spent 15 years at the General Electric R&D Center, Schenectady, NY, leading their power device effort and was bestowed the highest rank of Coolidge Fellow for inventing, developing and commercializing the IGBT. It is now utilized in all sectors of the economy, including electric vehicles and renewable energy generation. He derived the Baliga’s-Figure-of-Merit (BFOM) in 1979 that is widely used for wide band gap semiconductor power devices. He joined North Carolina State University (NCSU) in 1988 as a Full Professor and was promoted to Distinguished University Professor in 1997 and subsequently Progress Energy Distinguished University Professor. He has founded four start-up companies with successful products while at NCSU. Dr. Baliga has authored 28 books and over 750 publications in international journals and conference digests. He is the author of the textbook Fundamentals of Power Semiconductor Devices (Springer, 2018), now in its second edition, and three Springer monographs: Advanced High Voltage Power Device Concepts (2012), Advanced Power MOSFET Concepts (2010), and Advanced Power Rectifier Concepts (2009). President Obama honored him with the National Medal of Technology and Innovation in 2011 at the White House and he is the recipient of the highest IEEE recognition, the Medal of Honor in 2014, the Global Energy Prize in 2015, and the Millennium Technology Prize in 2024. He holds 124 U.S. patents and was inducted into the National Inventors Hall of Fame as the sole inventor of the insulated-gate bipolar transistor (IGBT) in 2016. Ajit Kanale is a Power Applications Engineer in the Advanced Power Applications Group at Wolfspeed Inc. He graduated with a Bachelor’s in Avionics from the Indian Institute of Space Science and Technology, Thiruvananthapuram, India. In 2012, he was posted as a Satellite Engineer in the Indian Space Research Organization’s satellite mission control facility in Bangalore, managing remote sensing and scientific satellite missions. In 2016, he moved to Raleigh, NC, to pursue graduate studies at North Carolina State University. He obtained his Master’s Degree in Electrical Engineering in 2019, with a thesis on short-circuit characterization of the 1.2 kV Silicon Carbide JBSFET device under the joint guidance of Prof. B. Jayant Baliga and Prof. Subhashish Bhattacharya. From 2018 to 2022, with the same advisors, he pursued doctoral research on the BaSIC topology to improve short-circuit ruggedness of power devices. In addition, he also assisted in characterizing several innovative 650 V and 1.2 kV SiC power MOSFET and JBSFET device designs, including the Split-Gate, Buffered-Gate, Hexagonal-cell MOSFETs, and the BiDirectional FET (BiDFET).

From the Back Cover

Advanced High Voltage Power Device Concepts describes devices utilized in power transmission and distribution equipment, and for very high power motor control in electric trains and steel-mills. Since these devices must be capable of supporting more than 5000-volts in the blocking mode, this books covers operation of devices rated at 5,000-V, 10,000-V and 20,000-V. Advanced concepts (the MCT, the BRT, and the EST) that enable MOS-gated control of power thyristor structures are described and analyzed in detail. In addition, detailed analyses of the silicon IGBT, as well as the silicon carbide MOSFET and IGBT, are provided for comparison purposes. Throughout the book, analytical models are generated to give a better understanding of the physics of operation for all the structures.

This book provides readers with:

• The first comprehensive treatment of high voltage (over 5000-volts) power devices suitable for the power distribution, traction, and motor-control markets;
• Analytical formulations for all the device structures with validation performed using numerical simulations;
• Analysis of potential silicon carbide structures that could compete with the silicon devices.

Advanced High Voltage Power Device Concepts is an ideal book for researchers, engineers, and educators interested in emerging technology for renewable energy generation and distribution.

This book provides readers with:

• The first comprehensive treatment of high voltage (over 5000-volts) power devices suitable for the power distribution, traction, and motor-control markets;
• Analytical formulations for all the device structures with validation performed using numerical simulations;
• Analysis of potential silicon carbide structures that could compete with the silicon devices.

Advanced High Voltage Power Device Concepts is an ideal book for researchers, engineers, and educators interested in emerging technology for renewable energy generation and distribution.

Edition details

• Publisher: Springer
• Publication date: 2011
• Language: English
• ISBN 10: 1461402689
• ISBN 13: 9781461402688
• Binding: Hardcover
• Number of pages: 568