Items related to Characterization Methods for Submicron MOSFETs: 352...
Characterization Methods for Submicron MOSFETs: 352 (The Springer International Series in Engineering and Computer Science, 352) - Softcover
Synopsis
It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications.
"synopsis" may belong to another edition of this title.
Other Popular Editions of the Same Title
Search results for Characterization Methods for Submicron MOSFETs: 352...
Stock Image
Characterization Methods for Submicron MOSFETs (The Springer International Series in Engineering and Computer Science)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
Condition: New. In. Seller Inventory # ria9781461285847_new
Quantity: Over 20 available
Seller Image
Characterization Methods for Submicron MOSFETs
Seller: moluna, Greven, Germany
Seller rating 5 out of 5 stars
Condition: New. Seller Inventory # 4191149
Quantity: Over 20 available
Seller Image
Characterization Methods for Submicron MOSFETs
Published by
Springer US, Springer US, 2011
ISBN 10: 1461285844
ISBN 13: 9781461285847
New
Taschenbuch
Seller: AHA-BUCH GmbH, Einbeck, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications. Seller Inventory # 9781461285847
Quantity: 1 available
Seller Image
Characterization Methods for Submicron MOSFETs
Print on DemandSeller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications. 252 pp. Englisch. Seller Inventory # 9781461285847
Quantity: 2 available
Seller Image
Characterization Methods for Submicron MOSFETs
Published by
Springer US, Springer US Sep 2011, 2011
ISBN 10: 1461285844
ISBN 13: 9781461285847
New
Taschenbuch
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 252 pp. Englisch. Seller Inventory # 9781461285847
Quantity: 1 available
Stock Image
Characterization Methods for Submicron Mosfets
Seller: Books Puddle, New York, NY, U.S.A.
Seller rating 4 out of 5 stars
Condition: New. pp. 252. Seller Inventory # 2697560968
Quantity: 4 available
Stock Image
Characterization Methods for Submicron MOSFETs (The Springer International Series in Engineering and Computer Science)
Seller: Lucky's Textbooks, Dallas, TX, U.S.A.
Seller rating 5 out of 5 stars
Condition: New. Seller Inventory # ABLIING23Mar2716030029842
Quantity: Over 20 available
Stock Image
Characterization Methods for Submicron Mosfets
Print on DemandSeller: Majestic Books, Hounslow, United Kingdom
Seller rating 5 out of 5 stars
Condition: New. Print on Demand pp. 252 49:B&W 6.14 x 9.21 in or 234 x 156 mm (Royal 8vo) Perfect Bound on White w/Gloss Lam. Seller Inventory # 94836311
Quantity: 4 available
Stock Image
Characterization Methods for Submicron MOSFETs (The Springer International Series in Engineering and Computer Science, 352)
Seller: Mispah books, Redhill, SURRE, United Kingdom
Seller rating 4 out of 5 stars
Paperback. Condition: Like New. Like New. book. Seller Inventory # ERICA80014612858446
Quantity: 1 available
Stock Image
Characterization Methods for Submicron Mosfets
Print on DemandSeller: Biblios, Frankfurt am main, HESSE, Germany
Seller rating 4 out of 5 stars
Condition: New. PRINT ON DEMAND pp. 252. Seller Inventory # 1897560962
Quantity: 4 available