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Synopsis
Readers acquire understanding of why leakage power components are becoming increasingly relevant in CMOS systems that use nanometer scale MOS devices. Leakage current sources at the MOS device level including sub-threshold and different types of tunneling are discussed in detail. The book will cover in detail promising solutions at the device, circuit, and architecture levels of abstraction. Since manifestation of these MOS device leakage components at the full chip level depends considerably on several aspects including the nature of the circuit block, its state, its application workload, and Process/Voltage/Temperature conditions, the sensitivity of the various MOS leakage sources to these conditions are explained from the first principles. Also treated are the resulting effects so the reader understands the effectiveness of leakage power reduction solutions under these different conditions. With case studies supplying real-world examples that reap the benefits of leakage power reduction solutions, the book highlights different device design choices that exist to mitigate increases in the leakage components as technology scales.
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Leakage in Nanometer CMOS Technologies (Integrated Circuits and Systems)
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Leakage in Nanometer CMOS Technologies
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Each chapter is written by a different combination of experts on the subjectsEach chapter is written by a different combination of experts on the subjectsIncludes supplementary material: sn.pub/extrasCovers in detail promising solut. Seller Inventory # 4174199
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Leakage in Nanometer CMOS Technologies
Print on DemandSeller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Covers in detail promising solutions at the device, circuit, and architecture levels of abstraction after first explaining the sensitivity of the various MOS leakage sources to these conditions from the first principles. Also treated are the resulting effects so the reader understands the effectiveness of leakage power reduction solutions under these different conditions. Case studies supply real-world examples that reap the benefits of leakage power reduction solutions as the book highlights different device design choices that exist to mitigate increases in the leakage components as technology scales. 320 pp. Englisch. Seller Inventory # 9781441938268
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Leakage in Nanometer CMOS Technologies
Seller: AHA-BUCH GmbH, Einbeck, Germany
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Scaling transistors into the nanometer regime has resulted in a dramatic increase in MOS leakage (i.e., off-state) current. Threshold voltages of transistors have scaled to maintain performance at reduced power supply voltages. Leakage current has become a major portion of the total power consumption, and in many scaled technologies leakage contributes 30-50% of the overall power consumption under nominal operating conditions. Leakage is important in a variety of different contexts. For example, in desktop applications, active leakage power (i.e., leakage power when the processor is computing) is becoming significant compared to switching power. In battery operated systems, standby leakage (i.e., leakage when the processor clock is turned off) dominates as energy is drawn over long idle periods. Increased transistor leakages not only impact the overall power consumed by a CMOS system, but also reduce the margins available for design due to the strong relationship between process variation and leakage power. It is essential for circuit and system designers to understand the components of leakage, sensitivity of leakage to different design parameters, and leakage mitigation techniques in nanometer technologies. This book provides an in-depth treatment of these issues for researchers and product designers. Seller Inventory # 9781441938268
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Leakage in Nanometer CMOS Technologies
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Springer US, Springer New York Nov 2010, 2010
ISBN 10: 1441938265
ISBN 13: 9781441938268
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Scaling transistors into the nanometer regime has resulted in a dramatic increase in MOS leakage (i.e., off-state) current. Threshold voltages of transistors have scaled to maintain performance at reduced power supply voltages. Leakage current has become a major portion of the total power consumption, and in many scaled technologies leakage contributes 30-50% of the overall power consumption under nominal operating conditions. Leakage is important in a variety of different contexts. For example, in desktop applications, active leakage power (i.e., leakage power when the processor is computing) is becoming significant compared to switching power. In battery operated systems, standby leakage (i.e., leakage when the processor clock is turned off) dominates as energy is drawn over long idle periods. Increased transistor leakages not only impact the overall power consumed by a CMOS system, but also reduce the margins available for design due to the strong relationship between process variation and leakage power. It is essential for circuit and system designers to understand the components of leakage, sensitivity of leakage to different design parameters, and leakage mitigation techniques in nanometer technologies. This book provides an in-depth treatment of these issues for researchers and product designers.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 320 pp. Englisch. Seller Inventory # 9781441938268
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Leakage in Nanometer CMOS Technologies (Integrated Circuits and Systems)
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Leakage in Nanometer CMOS Technologies (Integrated Circuits and Systems)
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Leakage in Nanometer CMOS Technologies
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Leakage in Nanometer CMOS Technologies (Integrated Circuits and Systems)
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Leakage in Nanometer CMOS Technologies
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Paperback. Condition: Brand New. 307 pages. 9.00x6.00x0.73 inches. In Stock. Seller Inventory # x-1441938265
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