Measurement and Modeling of Silicon Heterostructure Devices - Hardcover

Cressler, John D.

Hardcover

ISBN 10: 1420066927 ISBN 13: 9781420066920

Publisher: CRC Press, 2007

Synopsis

When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data.

Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

About this title

About the Author

John D. Cressler

Edition details

• Publisher: CRC Press
• Publication date: 2007
• Language: English
• ISBN 10: 1420066927
• ISBN 13: 9781420066920
• Binding: Hardcover
• Edition number: 1
• Number of pages: 198