This proceedings volume archives the contributions of the speakers who attended the NATO Advanced Research Workshop on “Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment” held at the Sanatorium Puscha Ozerna, th th Kyiv, Ukraine, from 25 to 29 April 2004. The semiconductor industry has maintained a very rapid growth during the last three decades through impressive technological achievements which have resulted in products with higher performance and lower cost per function. After many years of development semiconductor-on-insulator materials have entered volume production and will increasingly be used by the manufacturing industry. The wider use of semiconductor (especially silicon) on insulator materials will not only enable the benefits of these materials to be further demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe and their incorporation in future collaborations.
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This book collects the papers presented during NATO Advanced Research Workshop "Science and technology of Semiconductor on Insulator (SOI) structures and devices operating in a harsh environment", held in Kiev 26-30 April 2004. The volume contains both reviews from invited speakers and selected papers presenting major innovations in SOI materials and devices. Particular attention is paid to the reliability of SOI structures operating under harsh conditions. In the first part, the book deals with SOI material technology, the evolution of SOI materials, achievements in the main standard technologies as Smart Cut, SIMOX, porous silicon, as well as methods to create more exotic structures are described. The second part of the book covers the reliability aspect of SOI devices operating in a harsh environment: high and low temperatures, high voltages, with a focus on radiation effects and characterization of these devices. The third part of the book overviews novel devices and sensors opportunities for such conditions and the book closes with papers discussing the perspectives of SOI scaling to nano devices.
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