Unlock the future of nanotechnology with this essential guide, which provides an exhaustive exploration of solutions to overcome the physical limits of silicon and optimize the performance of next-generation nanoscale semiconductor devices.
As the role of microelectronics grows in today’s world, there is a need for new material solutions that move away from the limited conductivity of silicon to improve the electronic properties in nanoscale semiconductor devices. This unique guide exhaustively explores a number of topics, including 2D materials, microelectronic devices, large VLSI circuit design, and leakage mitigation techniques. The book showcases in-depth analyses of microelectronic device structures and their applications, properties, and characterization. With its easy-to-understand approach, this book is an excellent resource for novices and experts alike.
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Balwinder Raj, PhD is an Associate Professor and an Associate Dean of Academics at the National Institute of Technology Jalandhar with more than 15 years of teaching and research experience. He has authored and co-authored eight books, 15 book chapters, and more than 150 research papers in peer-reviewed national and international journals and conferences. His areas of interest include classical and non-classical nanoscale semiconductor device modeling, nanoelectronics, FinFET-based memory design, and low-power VLSI design.
Koushik Guha, PhD is an Associate Professor and Head of the Department of Electronics and Communication Engineering at the National Institute of Technology Silchar. He has published more than 200 papers in international journals and conferences of repute, 35 book chapters, and two books. His current research interests include mimicking human body functions using micro-electro-mechanical systems (MEMS) technology, MEMS energy harvesting, design and development of smart sensors for IoT, and VLSI circuit design and optimization.
Shiromani Balmukund Rahi, PhD is an Assistant Professor in the School of Information and Communication Technology at Gautam Buddha University. He has published 25 research articles, two conference proceedings, 25 book chapters for various book projects, and seven books. His research focuses on the development of ultra-low power devices such as tunnel FETs and negative capacitance FETs.
Jyoti Kandpal, PhD is an Assistant Professor in the Department of Electronics and Communication Engineering at Graphic Era Hill University. She has more than 40 publications to her cresit in international journals and conferences. Her research interests include low-power VLSI design and high-performance digital circuit design.
Unlock the future of nanotechnology with this essential guide, which provides an exhaustive exploration of solutions to overcome the physical limits of silicon and optimize the performance of next-generation nanoscale semiconductor devices.
As the role of microelectronics grows in today’s world, there is a need for new material solutions that move away from the limited conductivity of silicon to improve the electronic properties in nanoscale semiconductor devices. This unique guide exhaustively explores a number of topics, including 2D materials, microelectronic devices, large VLSI circuit design, and leakage mitigation techniques. The book showcases in-depth analyses of microelectronic device structures and their applications, properties, and characterization. With its easy-to-understand approach, this book is an excellent resource for novices and experts alike.
"About this title" may belong to another edition of this title.
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