Excerpt from Second Breakdown in Semiconductor Devices: A Bibliography
Almost 200 references with appropriate key words are listed which provide, it is believed, a comprehensive coverage of the literature Of second breakdown in transis tors and other semiconductor devices from 1958 through much Of 1967. A representative list Of earlier papers dealing with what appears to be second breakdown in point-contact and p-n junction diodes is -also included. The indexes consist Of an author index and an index to subject matter with reference tabulations and-with key word assignments.
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Paperback. Condition: New. Print on Demand. This book comprehensively delves into the phenomenon of second breakdown in transistors, presenting a detailed analysis of its causes, characteristics, and implications. The author delves into the theoretical underpinnings of this phenomenon, exploring various mechanisms such as thermal instability, charge carrier effects, and non-thermal effects. By examining different types of transistors and diodes, the book provides a thorough understanding of the factors influencing second breakdown and its manifestation in different semiconductor devices. Additionally, practical aspects are addressed, including design considerations, precautions for safe operation, and testing techniques for assessing second breakdown susceptibility. Through a combination of theoretical analysis, experimental observations, and practical insights, this book offers valuable knowledge for researchers, engineers, and anyone interested in understanding and mitigating second breakdown in semiconductor devices. This book is a reproduction of an important historical work, digitally reconstructed using state-of-the-art technology to preserve the original format. In rare cases, an imperfection in the original, such as a blemish or missing page, may be replicated in the book. print-on-demand item. Seller Inventory # 9781390537291_0
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