Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change - Softcover

Li, Hai; Chen, Yiran

Softcover

ISBN 10: 1138076635 ISBN 13: 9781138076631

Publisher: CRC Press, 2017

Synopsis

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

About this title

About the Author

Hai Li

From the Back Cover

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

Edition details

• Publisher: CRC Press
• Publication date: 2017
• Language: English
• ISBN 10: 1138076635
• ISBN 13: 9781138076631
• Binding: Paperback
• Edition number: 1
• Number of pages: 204