Metallic Spintronic Devices (Devices, Circuits, and Systems) - Softcover

Softcover

ISBN 10: 113807232X ISBN 13: 9781138072329

Publisher: CRC Press, 2017

Synopsis

Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also:

• Describes spintronic applications in current and future magnetic recording devices
• Discusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modeling
• Explores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysis
• Investigates spintronic device write and read optimization in light of spintronic memristive effects
• Considers spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effects
• Proposes unique solutions for low-power spintronic device applications where memory is closely integrated with logic

Metallic Spintronic Devices aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.

About this title

About the Author

Xiaobin Wang is director at Avalanche Technology and consultant at Caraburo Consulting LLC and Ingredients LLC. He holds a Ph.D from the University of California, San Diego. Dr. Wang has published over 100 articles and holds 50 US patents, approved or pending. He previously worked at Western Digital and Seagate Technology. His work in memory and data storage includes device design, advanced technology gap closure, prediction of system performance through bottom-up (from physics to system performance) and top-down (from system performance to component requirements) approaches, company product platform and basic technology roadmap modeling, new concept initiation, and intellectual property analysis.

From the Back Cover

Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also: Describes spintronic applications in current and future magnetic recording devices Discusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modeling Explores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysis Investigates spintronic device write and read optimization in light of spintronic memristive effects Considers spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effects Proposes unique solutions for low-power spintronic device applications where memory is closely integrated with logic Metallic Spintronic Devices aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.

Edition details

• Publisher: CRC Press
• Publication date: 2017
• Language: English
• ISBN 10: 113807232X
• ISBN 13: 9781138072329
• Binding: Paperback
• Edition number: 1
• Number of pages: 274
• Editor: Wang Xiaobin