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Cmos GateStack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155 (MRS Proceedings) - Softcover
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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
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CMOS Gate-Stack Scaling ? Materials, Interfaces and Reliability Implications: Volume 1155 (MRS Proceedings)
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Cambridge University Press, 2014
ISBN 10: 1107408326
ISBN 13: 9781107408326
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CMOS Gate-Stack Scaling ? Materials, Interfaces and Reliability Implications: Volume 1155 (MRS Proceedings)
Published by
Cambridge University Press, 2014
ISBN 10: 1107408326
ISBN 13: 9781107408326
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Softcover
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Cmos GateStack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155 (MRS Proceedings)
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Cambridge University Press 2014-06-05, 2014
ISBN 10: 1107408326
ISBN 13: 9781107408326
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Cmos GateStack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155 (MRS Proceedings)
Published by
Cambridge University Press, 2014
ISBN 10: 1107408326
ISBN 13: 9781107408326
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Softcover
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Cmos Gate-Stack Scaling Materials, Interfaces and Reliability Implications
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Cambridge University Press CUP, 2014
ISBN 10: 1107408326
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CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155
Published by
Cambridge University Press, 2014
ISBN 10: 1107408326
ISBN 13: 9781107408326
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Cmos Gate-Stack Scaling Materials, Interfaces and Reliability Implications
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Cambridge University Press, 2014
ISBN 10: 1107408326
ISBN 13: 9781107408326
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Cmos GateStack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155 (MRS Proceedings)
Published by
Cambridge University Press, 2014
ISBN 10: 1107408326
ISBN 13: 9781107408326
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Softcover
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Cmos Gate-Stack Scaling Materials, Interfaces and Reliability Implications
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Cambridge University Press, 2014
ISBN 10: 1107408326
ISBN 13: 9781107408326
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CMOS Gate-Stack Scaling Materials, Interfaces and Reliability Implications: Volume 1155 (Paperback)
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Cambridge University Press, Cambridge, 2014
ISBN 10: 1107408326
ISBN 13: 9781107408326
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Paperback
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Paperback. Condition: new. Paperback. To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. Seller Inventory # 9781107408326
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